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Número de pieza | K3342 | |
Descripción | MOSFET ( Transistor ) - 2SK3342 | |
Fabricantes | Toshiba Semiconductor | |
Logotipo | ||
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2SK3342
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK3342
Switching Regulator Applications DC−DC Converter, and
Motor Drive Applications
Unit: mm
l Low drain−source ON resistance : RDS (ON) = 0.8 Ω (typ.)
l High forward transfer admittance : |Yfs| = 4.5 S (typ.)
l Low leakage current : IDSS = 100 µA (max) (VDS = 250 V)
l Enhancement−mode : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ)
Gate−source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Thermal Characteristics
Rating
250
250
±20
4.5
18
20
51
4.5
2.0
150
−55~150
Unit
V
V
V
A
A
W
mJ
A
mJ
°C
°C
JEDEC
―
JEITA
SC-64
TOSHIBA
2-7B1B
Weight: 0.36 g (typ.)
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (ch−c)
Rth (ch−a)
6.25 °C / W
125 °C / W
Note 1: Please use devices on condition that the channel temperature is
below 150°C.
Note 2: VDD = 50 V, Tch = 25°C (initial), L = 4.28 mH, RG = 25 Ω,
IAR = 4.5 A
Note 3: Repetitive rating; Pulse width limited by maximum channel
temperature.
This transistor is an electrostatic sensitive device.
Please handle with caution.
JEDEC
―
JEITA
―
TOSHIBA
2-7J1B
Weight: 0.36 g (typ.)
1 2002-01-25
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet K3342.PDF ] |
Número de pieza | Descripción | Fabricantes |
K3342 | MOSFET ( Transistor ) - 2SK3342 | Toshiba Semiconductor |
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