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PDF K3342 Data sheet ( Hoja de datos )

Número de pieza K3342
Descripción MOSFET ( Transistor ) - 2SK3342
Fabricantes Toshiba Semiconductor 
Logotipo Toshiba Semiconductor Logotipo



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2SK3342
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK3342
Switching Regulator Applications DCDC Converter, and
Motor Drive Applications
Unit: mm
l Low drainsource ON resistance : RDS (ON) = 0.8 (typ.)
l High forward transfer admittance : |Yfs| = 4.5 S (typ.)
l Low leakage current : IDSS = 100 µA (max) (VDS = 250 V)
l Enhancementmode : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drainsource voltage
Draingate voltage (RGS = 20 k)
Gatesource voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Thermal Characteristics
Rating
250
250
±20
4.5
18
20
51
4.5
2.0
150
55~150
Unit
V
V
V
A
A
W
mJ
A
mJ
°C
°C
JEDEC
JEITA
SC-64
TOSHIBA
2-7B1B
Weight: 0.36 g (typ.)
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (chc)
Rth (cha)
6.25 °C / W
125 °C / W
Note 1: Please use devices on condition that the channel temperature is
below 150°C.
Note 2: VDD = 50 V, Tch = 25°C (initial), L = 4.28 mH, RG = 25 ,
IAR = 4.5 A
Note 3: Repetitive rating; Pulse width limited by maximum channel
temperature.
This transistor is an electrostatic sensitive device.
Please handle with caution.
JEDEC
JEITA
TOSHIBA
2-7J1B
Weight: 0.36 g (typ.)
1 2002-01-25

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