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PDF UNR31A1 Data sheet ( Hoja de datos )

Número de pieza UNR31A1
Descripción Silicon PNP Epitaxial Transistor
Fabricantes Panasonic Semiconductor 
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Transistors with built-in Resistor
UNR31A1
Silicon PNP epitaxial planar transistor
For digital circuits
Features
Suitable for high-density mounting and downsizing of the equipment
Contribute to low power consumption
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
IC
PT
Tj
Tstg
50
50
80
100
125
55 to +125
Unit
V
V
mA
mW
°C
°C
0.33+–00..0025
3
0.23+–00..0025
12
(0.40) (0.40)
0.80±0.05
1.20±0.05
5°
Unit: mm
0.10+–00..0025
1: Base
2: Emitter
3: Collector
SSSMini3-F1 Package
Marking Symbol: CE
Internal Connection
R1 (10 kΩ)
B
R2
(10 kΩ)
C
E
Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0
50
V
Collector-emitter voltage (Base open) VCEO IC = −2 mA, IB = 0 50 V
Collector-base cutoff current (Emitter open) ICBO VCB = −50 V, IE = 0
0.1 µA
Collector-emitter cutoff current (Base open) ICEO VCE = −50 V, IB = 0
0.5 µA
Emitter-base cutoff current (Collector open) IEBO VEB = −6 V, IC = 0
0.5 mA
Forward current transfer ratio
hFE VCE = −10 V, IC = −5 mA
35
Collector-emitter saturation voltage
VCE(sat) IC = −10 mA, IB = − 0.3 mA
0.25 V
Output voltage high-level
VOH VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ −4.9
V
Output voltage low-level
VOL VCC = −5 V, VB = −2.5 V, RL = 1 k
0.2 V
Input resistance
R1
30% 10 +30% k
Resistance ratio
R1 / R2
0.8 1.0 1.2
Transition frequency
fT VCB = −10 V, IE = 1 mA, f = 200 MHz
80
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: April 2003
SJH00084AED
1

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