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PDF IPD053N06N3G Data sheet ( Hoja de datos )
| Número de pieza | IPD053N06N3G | |
| Descripción | OptiMOS Power-Transistor | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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Type
OptiMOS(TM)3 Power-Transistor
Features
• Ideal for high frequency switching and sync. rec.
• Optimized technology for DC/DC converters
• Excellent gate charge x R DS(on) product (FOM)
• N-channel, normal level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
Type
IPD053N06N3 G
Product Summary
V DS
R DS(on),max
ID
IPD053N06N3 G
60 V
5.3 mΩ
90 A
Package
Marking
PG-TO252-3
053N06N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D V GS=10 V, T C=25 °C2)
V GS=10 V, T C=100 °C
Pulsed drain current3)
I D,pulse T C=25 °C
Avalanche energy, single pulse4) E AS I D=90 A, R GS=25 Ω
Gate source voltage
V GS
1)J-STD20 and JESD22
2) Current is limited by bondwire; with an R thJC=1.3 K/W the chip is able to carry 109 A.
3) See figure 3 for more detailed information
4) See figure 13 for more detailed information
Value
90
78
360
68
±20
Unit
A
mJ
V
Rev.2.0
page 1
2008-11-25
1 page  
www.DataSheet4U.net
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
360
320
10 V 8 V
280
7V
240
200
6.5 V
160
120 6 V
80
40
0
0
5.5 V
5V
4.5 V
12
V DS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
200
3
160
120
80
40
175 °C
25 °C
0
0
Rev.2.0
246
V GS [V]
IPD053N06N3 G
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
12
5 V 5.5 V
6V
7V
10
8
6
8V
10 V
4
2
0
4 0 60 120 180 240 300 360
I D [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
150
125
100
75
50
25
0
80
page 5
40 80 120 160 200
I D [A]
2008-11-25
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IPD053N06N3G.PDF ] | |
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