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Número de pieza | 2SB1252 | |
Descripción | Silicon PNP epitaxial planar type Darlington(For power amplification) | |
Fabricantes | Panasonic Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SB1252 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! Power Transistors
2SB1252
Silicon PNP epitaxial planar type Darlington
For power amplification
Complementary to 2SD1892
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
s Features
q Optimum for 35W HiFi output
q High foward current transfer ratio hFE: 5000 to 30000
q Low collector to emitter saturation voltage VCE(sat): < 2.5V
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
Parameter
Symbol
Ratings
Unit
2.54±0.25
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
–120
–100
–5
–8
–5
45
2
150
–55 to +150
s Electrical Characteristics (TC=25˚C)
V
V
V
A
A
W
˚C
˚C
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
Internal Connection
C
B
E
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
ICBO
ICEO
IEBO
VCEO
hFE1
hFE2*
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
Conditions
VCB = –120V, IE = 0
VCE = –100V, IB = 0
VEB = –5V, IC = 0
IC = –30mA, IB = 0
VCE = –5V, IC = –1A
VCE = –5V, IC = –4A
IC = –4A, IB = –4mA
IC = –4A, IB = –4mA
VCE = –10V, IC = – 0.5A, f = 1MHz
IC = –4A, IB1 = –4mA, IB2 = 4mA,
VCC = –50V
min
–100
2000
5000
typ max Unit
–100 µA
–100 µA
–100 µA
V
30000
–2.5 V
–3.0 V
20 MHz
1.0 µs
0.8 µs
1.0 µs
*hFE2 Rank classification
Rank
Q
P
hFE2 5000 to 15000 8000 to 30000
1
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet 2SB1252.PDF ] |
Número de pieza | Descripción | Fabricantes |
2SB1252 | Silicon PNP epitaxial planar type Darlington(For power amplification) | Panasonic Semiconductor |
2SB1253 | Silicon PNP epitaxial planar type Darlington(For power amplification) | Panasonic Semiconductor |
2SB1254 | Silicon PNP epitaxial planar type Darlington(For power amplification) | Panasonic Semiconductor |
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