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PDF TC2998F Data sheet ( Hoja de datos )
| Número de pieza | TC2998F | |
| Descripción | GaAs Power FETs | |
| Fabricantes | Transcom | |
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- Preliminary Datasheet -
TC2998F
PRE.3_01/21/2008
2.7-2.9GHz 20W Packaged GaAs Power FETs
FEATURES
20 W Typical Power
10 dB Typical Linear Power Gain
High Linearity:
IP3 = 52 dBm Typical
High Power Added Efficiency:
Nominal PAE of 37 %
100 % DC and RF Tested
DESCRIPTION
The TC2998F is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor.
The ceramic package provides the best thermal conductivity for the GaAs FET. All devices are 100% DC
and RF tested to assure consistent quality. Typical applications include high dynamic range power amplifier
for commercial applications.
ELECTRICAL SPECIFICATIONS
Symbol
CONDITIONS
FREQ
P1dB
GL
IP3
PAE
Operating Frequency
Output Power at 1dB Gain Compression Point,
Vd = 10V, Id = 4.5A, f=2.7 – 2.9GHz
Linear Power Gain
Vd = 10V, Id = 4.5A, f=2.7 – 2.9GHz
Intercept Point of the 3rd-order Intermodulation, Vd = 10V, Id = 4.5A, f=2.7 – 2.9GHz,
*PSCL = 31 dBm
Power Added Efficiency at 1dB Compression Power
IDSS
gm
VP
BVDGO
Rth
Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V
Transconductance at VDS = 2 V, VGS = 0 V
Pinch-off Voltage at VDS = 2 V, ID = 60 mA
Drain-Gate Breakdown Voltage at IDGO =15 mA
Thermal Resistance
* PSCL: Output Power of Single Carrier Level, delta frequency=5MHz.
MIN
2.7
42
9
20
TYP
43
10
52
37
18.75
13500
-1.7
22
0.6
MAX
2.9
UNIT
GHz
dBm
dB
dBm
%
A
mS
Volts
Volts
C/W
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
P1/2
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| PDF Descargar | [ Datasheet TC2998F.PDF ] | |
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| Número de pieza | Descripción | Fabricantes |
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