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PDF TC2997C Data sheet ( Hoja de datos )
| Número de pieza | TC2997C | |
| Descripción | GaAs Power FETs | |
| Fabricantes | Transcom | |
| Logotipo |  |
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Preliminary
TC2997C
PRE3_20050418
2.1 GHz 20 W Flange Ceramic Packaged GaAs Power FETs
FEATURES
• 20 W Typical Power at 2.1 GHz
• 12 dB Typical Linear Power Gain at 2.1 GHz
• High Linearity: IP3 = 52 dBm Typical
• High Power Added Efficiency: Nominal PAE of 40 %
• Suitable for High Reliability Application
• Wg = 50 mm
• 100 % DC and RF Tested
• Flange Ceramic Package
PHOTO ENLARGEMENT
DESCRIPTION
The TC2997C is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power
transistor with input prematched circuits. The flange ceramic package provides the best thermal
conductivity for the GaAs FET. All devices are 100% DC and RF tested to assure consistent quality.
Typical applications include high dynamic range power amplifier for commercial applications.
ELECTRICAL SPECIFICATIONS (@ 2.1 GHz )
Symbol
CONDITIONS
P1dB Output Power at 1dB Gain Compression Point
GL Linear Power Gain
IP3 Intercept Point of the 3rd-order Intermodulation, *PSCL = 32 dBm
PAE Power Added Efficiency at 1dB Compression Power
IDSS
gm
VP
BVDGO
Rth
Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V
Transconductance at VDS = 2 V, VGS = 0 V
Pinch-off Voltage at VDS = 2 V, ID = 60 mA
Drain-Gate Breakdown Voltage at IDGO =15 mA
Thermal Resistance
* PSCL: Output Power of Single Carrier Level.
MIN
42
11
20
TYP
43
12
52
40
12.5
9000
-1.7
22
0.9
MAX
UNIT
dBm
dB
dBm
%
A
mS
Volts
Volts
°C/W
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
P1/3
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| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet TC2997C.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
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| TC2997D | 2.45 GHz 20 W Flange Ceramic Packaged GaAs Power FETs | Transcom |
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