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Número de pieza | TC2996B | |
Descripción | GaAs Power FETs | |
Fabricantes | Transcom | |
Logotipo | ||
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TC2996B
REV1_20070503
1.9 GHz 12 W Flange Ceramic Packaged GaAs Power FETs
FEATURES
• 12 W Typical Power at 1.9 GHz
• 13 dB Typical Linear Power Gain at 1.9 GHz
• High Linearity: IP3 = 50 dBm Typical
• High Power Added Efficiency: Nominal PAE of 40 %
• Suitable for High Reliability Application
• Lg = 1 µm, Wg = 30 mm
• 100 % DC and RF Tested
• Flange Ceramic Package
PHOTO ENLARGEMENT
DESCRIPTION
The TC2996B is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power
transistor with input prematched circuits. The flange ceramic package provides the best thermal
conductivity for the GaAs FET. All devices are 100% DC and RF tested to assure consistent quality.
Typical applications include high dynamic range power amplifiers for commercial applications.
ELECTRICAL SPECIFICATIONS (@ 1.9 GHz)
SYMBOL
CONDITIONS
MIN
P1dB Output Power at 1dB Gain Compression Point VDS = 10 V, IDS = 2.5A
39.5
GL Linear Power Gain VDS = 10 V, IDS = 2.5A
12
IP3 Intercept Point of the 3rd-order Intermodulation, VDS = 10 V, IDS = 2.5A, *PSCL = 28 dBm
PAE Power Added Efficiency at 1dB Compression Power
IDSS
gm
VP
BVDGO
Rth
Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V
Transconductance at VDS = 2 V, VGS = 0 V
Pinch-off Voltage at VDS = 2 V, ID = 60 mA
Drain-Gate Breakdown Voltage at IDGO =15 mA
Thermal Resistance
20
* PSCL: Output Power of Single Carrier Level.
TYP
41.0
13
50
40
7.5
5400
-1.7
22
1.5
MAX
UNIT
dBm
dB
dBm
%
A
mS
Volts
Volts
°C/W
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
P1/3
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet TC2996B.PDF ] |
Número de pieza | Descripción | Fabricantes |
TC2996A | GaAs Power FETs | Transcom |
TC2996B | GaAs Power FETs | Transcom |
TC2996D | 2.45 GHz 12 W Flange Ceramic Packaged GaAs Power FETs | Transcom |
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