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PDF IRLB8748PBF Data sheet ( Hoja de datos )
| Número de pieza | IRLB8748PBF | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 96231
IRLB8748PbF
Applications
l Optimized for UPS/Inverter Applications
l High Frequency Synchronous Buck
Converters for Computer Processor Power
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial use
Benefits
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l Lead-Free
VDSS
30V
HEXFET® Power MOSFET
RDS(on) max Qg
4.8m:
15nC
D
G
Gate
DS
G
TO-220AB
IRLB8748PbF
D
Drain
S
Source
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
cPulsed Drain Current
hMaximum Power Dissipation
hMaximum Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
iMounting Torque, 6-32 or M3 screw
Thermal Resistance
RθJC
RθCS
RθJA
hJunction-to-Case
Parameter
Case-to-Sink, Flat Greased Surface
gJunction-to-Ambient
Max.
30
± 20
92f
65
78
370
75
38
0.5
-55 to + 175
300 (1.6mm from case)
y y10 lbf in (1.1N m)
Units
V
A
W
W/°C
°C
Typ.
–––
0.5
–––
Max.
2.0
–––
62
Units
°C/W
Notes through are on page 9
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IRLB8748PbF
100 2.5
Limited By Package
80
2.0
60
1.5
40
ID = 50µA
20
1.0
ID = 250µA
ID = 1.0mA
0
25
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig 9. Maximum Drain Current vs.
Case Temperature
0.5
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 10. Threshold Voltage vs. Temperature
10
1
0.1
0.01
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.001
1E-006
R1R1
R2R2
R3R3
R4R4
Ri (°C/W) τi (sec)
1.55246 0.005303
τJ τJ
τ1 τ1
τCτ 0.00682 8.250407
τ2 τ2
τ3 τ3
τ4τ4
0.00172 6.932919
SINGLE PULSE
( THERMAL RESPONSE )
CiC= iτi/Ri/iRi
0.43999 0.000317
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
0.01
0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRLB8748PBF.PDF ] | |
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