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PDF 2SB1036 Data sheet ( Hoja de datos )
| Número de pieza | 2SB1036 | |
| Descripción | Silicon PNP epitaxial planer type(For low-frequency and low-noise amplification) | |
| Fabricantes | Panasonic Semiconductor | |
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Transistor
2SB1036
Silicon PNP epitaxial planer type
For low-frequency and low-noise amplification
s Features
q Optimum for high-density mounting.
q Allowing supply with the radial taping.
q Low noise voltage NV.
4.0±0.2
Unit: mm
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–120
–120
–5
–50
–20
300
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
marking
123
1.27 1.27
2.54±0.15
1:Emitter
2:Collector
3:Base
EIAJ:SC–72
New S Type Package
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
ICBO
ICEO
VCBO
VCEO
VEBO
hFE*
VCE(sat)
fT
Noise voltage
NV
VCB = –50V, IE = 0
–100 nA
VCE = –50V, IB = 0
–1 µA
IC = –10µA, IE = 0
–120
V
IC = –1mA, IB = 0
–120
V
IE = –10µA, IC = 0
–5
V
VCE = –5V, IC = –2mA
180 520
IC = –20mA, IB = –2mA
– 0.6
V
VCB = –5V, IE = 2mA, f = 200MHz
200 MHz
VCE = –40V, IC = –1mA, GV = 80dB,
Rg = 100kΩ, Function = FLAT
150 mV
*hFE Rank classification
Rank
R
hFE 180 ~ 360
S
260 ~ 520
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SB1036.PDF ] | |
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