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PDF IPP64CN10N Data sheet ( Hoja de datos )
| Número de pieza | IPP64CN10N | |
| Descripción | Power Transistor | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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OptiMOS®2 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
Product Summary
V DS
R DS(on),max
ID
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
Type
IPD64CN10N G
IPU64CN10N G
IPD64CN10N G
IPU64CN10N G
100 V
64 mΩ
17 A
Package
Marking
PG-TO252-3
64CN10N
PG-TO251-3
64CN10N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=17 A, R GS=25 Ω
Reverse diode dv /dt
dv /dt
I D=17 A, V DS=80 V,
di /dt =100 A/µs,
T j,max=175 °C
Gate source voltage3)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
2) see figure 3
3) T jmax=150°C and duty cycle D =0.01 for V GS<-5V
www.DRateavS.he1e.t041U.net
page 1
Value
17
13
68
34
6
±20
44
-55 ... 175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
2006-02-21
1 page  
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
50
10 V
8V
40
30 7 V
20 6.5 V
6V
10
5.5 V
5V
4.5 V
0
0123
V DS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
50
4
IPD64CN10N G
IPU64CN10N G
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
140
120 5 V 5.5 V 6 V
7V
8V
100
80
60
10 V
40
20
0
50
20 40
I D [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
60
30
40
20
30
20
10
0
0
Rev. 1.01
175 °C
25 °C
246
V GS [V]
10
0
80
page 5
10 20 30 40 50
I D [A]
2006-02-21
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IPP64CN10N.PDF ] | |
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