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PDF IPP60R099CPA Data sheet ( Hoja de datos )
| Número de pieza | IPP60R099CPA | |
| Descripción | Power Transistor | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IPP60R099CPA (archivo pdf) en la parte inferior de esta página. Total 11 Páginas | ||
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CoolMOSTM Power Transistor
Features
• Worldwide best R ds,on in TO220
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Automotive AEC Q101 qualified
• Green package (RoHS compliant)
CoolMOS CPA is specially designed for:
• DC/DC converters for Automotive Applications
Product Summary
V DS
R DS(on),max
Q g,typ
IPP60R099CPA
600 V
0.105 Ω
60 nC
PG-TO220-3-1
Type
IPP60R099CPA
Package
Marking
PG-TO220-3-1 6R099A
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C
Pulsed drain current1)
I D,pulse
T C=100 °C
T C=25 °C
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
1),2)
AR
Avalanche
current,
repetitive
t
1),2)
AR
MOSFET dv /dt ruggedness
E AS
E AR
I AR
dv /dt
I D=11 A, V DD=50 V
I D=11 A, V DD=50 V
V DS=0...480 V
Gate source voltage
V GS static
Power dissipation
P tot T C=25 °C
Operating temperature
Tj
Storage temperature
T stg
Mounting torque
M3 and M3.5 screws
www.DRateavS.he2e.t24U.net
page 1
Value
31
19
93
800
1.2
11
50
±20
255
-40 ... 150
-40 ... 150
60
Unit
A
mJ
A
V/ns
V
W
°C
Ncm
2009-11-25
1 page  
5 Typ. output characteristics
I D=f(V DS); T j=150 °C
parameter: V GS
50
8V 7V
10 V
20 V
6V
40 5.5 V
30
5V
20
4.5 V
10
IPP60R099CPA
6 Typ. drain-source on-state resistance
R DS(on)=f(I D); T j=150 °C
parameter: V GS
0.5
0.4 5.5 V
6V
6.5 V
0.3 5 V
7V
20 V
0.2
0.1
0
0 5 10 15
V DS [V]
7 Drain-source on-state resistance
R DS(on)=f(T j); I D=18 A; V GS=10 V
0.3
0
20 0 10 20 30 40 50
I D [A]
8 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
160
0.25
0.2
C °25
120
0.15
0.1
0.05
98 %
typ
80
40
C °150
0
-60 -20 20
60 100 140 180
T j [°C]
0
0 2 4 6 8 10
V GS [V]
Rev. 2.2
page 5
2009-11-25
5 Page 
NOTIFICATION
N° 040/10
Information on N-Channel MOSFET products designed for automotive
applications
Products affected:
SalesName
IPB60R099CPA
IPB60R199CPA
IPB60R299CPA
IPC60R075CPA
IPI60R099CPA
IPP60R099CPA
IPW60R045CPA
IPW60R075CPA
IPW60R099CPA
Package
PG-TO263-3-2
PG-TO263-3-2
PG-TO263-3-2
Bare Die
PG-TO262-3-1
PG-TO220-3-1
PG-TO247-3-41
PG-TO247-3-41
PG-TO247-3-41
Dear Customer,
The devices listed for this notification are sensitive to hard commutation of the conducting body diode. This
operating condition can occur in half-bridge configurations used in ZVS phase shift and resonant switching PWM
converters. Using the device under such conditions may result in violation of the datasheet specification limits and
may lead to permanent damage of the device.
Please take care that in the context of the application described above the datasheet limits are not exceeded.
Best Regards
Michael Paulu
If you have any questions, please do not hesitate to contact your local Sales office.
2010-05-12
Page 1 of 1
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet IPP60R099CPA.PDF ] | |
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