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PDF IPD600N25N3G Data sheet ( Hoja de datos )
| Número de pieza | IPD600N25N3G | |
| Descripción | Power Transistor | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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IPD600N25N3 G
OptiMOSTM3 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
Product Summary
VDS
RDS(on),max
ID
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Halogen-free according to IEC61249-2-21
• Ideal for high-frequency switching and synchronous rectification
Type
IPD600N25N3 G
250 V
60 mW
25 A
Package
Marking
PG-TO252-3
600N25N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current2)
Avalanche energy, single pulse
ID
I D,pulse
E AS
T C=25 °C
T C=100 °C
T C=25 °C
I D=25 A, R GS=25 W
Reverse diode dv /dt
dv /dt
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
2) See figure 3
Rev. 2.3
page 1
Value
25
18
100
210
10
±20
136
-55 ... 175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
2011-07-14
1 page  
IPD600N25N3 G
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
60
50
10 V
7V
5V
40
30
20 4.5 V
10
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
100
80
4.5 V
5V
60
7V
10 V
40
20
0
0123
VDS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
40
4
30
20
10
0
0
Rev. 2.3
175 °C
25 °C
246
VGS [V]
0
50
10 20
ID [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
30
80
70
60
50
40
30
20
10
0
80
page 5
25 50
ID [A]
75
2011-07-14
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IPD600N25N3G.PDF ] | |
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