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PDF IPB60R199CPA Data sheet ( Hoja de datos )
| Número de pieza | IPB60R199CPA | |
| Descripción | Power Transistor | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IPB60R199CPA (archivo pdf) en la parte inferior de esta página. Total 11 Páginas | ||
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CoolMOS® Power Transistor
Features
• Lowest figure-of-merit Ron x Qg
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Automotive AEC Q101 qualified
• Green package (RoHS compliant)
CoolMOS CPA is specially designed for:
• DC/DC converters for Automotive Applications
Product Summary
V DS
R DS(on),max
Q g,typ
IPB60R199CPA
600 V
0.199 Ω
33 nC
PG-TO263-3
Type
IPB60R199CPA
Package
PG-TO263-3
Marking
6R199A
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous drain current
Pulsed drain current1)
Avalanche energy, single pulse
Symbol Conditions
I D T C=25 °C
T C=100 °C
I D,pulse T C=25 °C
E AS I D=6.6 A, V DD=50 V
Avalanche
energy,
repetitive
t
1),2)
AR
E AR
I D=6.6 A, V DD=50 V
Avalanche
current,
repetitive
t
1),2)
AR
I AR
MOSFET dv /dt ruggedness
Gate source voltage
Power dissipation
Operating temperature
Storage temperature
dv /dt
V GS
P tot
Tj
T stg
V DS=0...480 V
static
T C=25 °C
www.DRateaSvh. e2e.t40U.net
page 1
Value
16
10
51
436
0.66
6.6
50
±20
139
-40 ... 150
-40 ... 150
Unit
A
mJ
A
V/ns
V
W
°C
2009-09-01
1 page  
5 Typ. output characteristics
I D=f(V DS); T j=150 °C
parameter: V GS
35
30
25
20
15
10
5
20 V
10 V
8V 7V
6V
5.5 V
5V
4.5 V
IPB60R199CPA
6 Typ. drain-source on-state resistance
R DS(on)=f(I D); T j=150 °C
parameter: V GS
1.2
6.5 V
6V
1 5 V 5.5 V
10 V
0.8
7V
0.6
0.4
0.2
0
0 5 10 15
V DS [V]
7 Drain-source on-state resistance
R DS(on)=f(T j); I D=9.9 A; V GS=10 V
0.6
0
20 0 10 20
I D [A]
8 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
80
30
40
0.5 25 °C
60
0.4
0.3
98 %
0.2 typ
0.1
40
20
150 °C
0
-60 -20 20 60 100 140 180
T j [°C]
0
0 2 4 6 8 10
V GS [V]
Rev. 2.0
page 5
2009-09-01
5 Page 
NOTIFICATION
N° 040/10
Information on N-Channel MOSFET products designed for automotive
applications
Products affected:
SalesName
IPB60R099CPA
IPB60R199CPA
IPB60R299CPA
IPC60R075CPA
IPI60R099CPA
IPP60R099CPA
IPW60R045CPA
IPW60R075CPA
IPW60R099CPA
Package
PG-TO263-3-2
PG-TO263-3-2
PG-TO263-3-2
Bare Die
PG-TO262-3-1
PG-TO220-3-1
PG-TO247-3-41
PG-TO247-3-41
PG-TO247-3-41
Dear Customer,
The devices listed for this notification are sensitive to hard commutation of the conducting body diode. This
operating condition can occur in half-bridge configurations used in ZVS phase shift and resonant switching PWM
converters. Using the device under such conditions may result in violation of the datasheet specification limits and
may lead to permanent damage of the device.
Please take care that in the context of the application described above the datasheet limits are not exceeded.
Best Regards
Michael Paulu
If you have any questions, please do not hesitate to contact your local Sales office.
2010-05-12
Page 1 of 1
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet IPB60R199CPA.PDF ] | |
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