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Número de pieza | IPB017N06N3G | |
Descripción | OptiMOS3 Power Transistor | |
Fabricantes | Infineon Technologies | |
Logotipo | ||
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IPB017N06N3 G
OptiMOS™3 Power-Transistor
Features
• Ideal for high frequency switching and sync. rec.
• Optimized technology for DC/DC converters
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance RDS(on)
• N-channel, normal level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Halogen-free according to IEC61249-2-21
Type
IPB017N06N3 G
Product Summary
V DS
R DS(on),max
ID
60 V
1.7 mΩ
180 A
Package
Marking
PG-TO263-7
017N06N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C2)
T C=100 °C
Pulsed drain current3)
Avalanche energy, single pulse4)
Gate source voltage
I D,pulse
E AS
V GS
T C=25 °C
I D=100 A, R GS=25 Ω
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
2) Current is limited by bondwire; with an R thJC=0.6 K/W the chip is able to carry 284 A.
3) See figure 3 for more detailed information
4) See figure 13 for more detailed information
Value
180
180
720
634
±20
250
-55 ... 175
55/175/56
www.DRateavS.he2e.t24U.net
page 1
Unit
A
mJ
V
W
°C
2009-11-16
1 page IPB017N06N3 G
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
480
10 V 8 V
400 6 V
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
7
4.5 V
6
5V
5.5 V
5
320
240
5.5 V
160
5V
80
4.5 V
0
012345
V DS [V]
4
3
6V
2
8V
10 V
1
0
0 80 160 240 320 400
I D [A]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
320
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
320
280
240 240
200
160 160
120
80
175 °C
25 °C
80
40
0
0
Rev. 2.2
24
V GS [V]
0
60
page 5
80 160
I D [A]
240
2009-11-16
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet IPB017N06N3G.PDF ] |
Número de pieza | Descripción | Fabricantes |
IPB017N06N3G | OptiMOS3 Power Transistor | Infineon Technologies |
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