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PDF IPB015N04NG Data sheet ( Hoja de datos )
| Número de pieza | IPB015N04NG | |
| Descripción | OptiMOS3 Power Transistor | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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Type
OptiMOS™3 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC1) for target applications
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• 100% Avalanche tested
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Product Summary
V DS
R DS(on),max
ID
Type
IPB015N04N G
IPP015N04N G
IPP015N04N G
IPB015N04N G
40 V
1.5 mΩ
120 A
Package
Marking
PG-TO263-3
015N04N
PG-TO220-3
015N04N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Pulsed drain current2)
I D,pulse
Avalanche current, single pulse3)
I AS
Avalanche energy, single pulse
E AS
Gate source voltage
V GS
1) J-STD20 and JESD22
2) See figure 3 for more detailed information
3) See figure 13 for more detailed information
V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
T C=25 °C
T C=25 °C
I D=100 A, R GS=25 Ω
Value
120
120
400
100
865
±20
Unit
A
mJ
V
www.DRateavS.he2e.t24U.net
page 1
2009-11-16
1 page  
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
600
10 V
500
7V
6.5 V
IPP015N04N G
IPB015N04N G
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
3
5V
2.5
400 2
6 V 5.5 V
6V
300 1.5 6.5 V
7V
200
5.5 V
1
10 V
100
0
012
V DS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
600
0.5
5V
0
3 0 40 80 120 160 200
I D [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
350
500 300
250
400
300
200
100
175 °C
25 °C
0
1234567
V GS [V]
200
150
100
50
0
0
Rev. 2.2
page 5
40 80 120 160 200
I D [A]
2009-11-16
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IPB015N04NG.PDF ] | |
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