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PDF 2SA966 Data sheet ( Hoja de datos )
| Número de pieza | 2SA966 | |
| Descripción | Silicon PNP Epitaxial Type Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SA966 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA966
Audio Power Amplifier Applications
2SA966
Unit: mm
• Complementary to 2SC2236 and 3-W output applications.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
−30
−30
−5
−1.5
-0.15
900
150
−55 to 150
V
V
V
A
A
mW
°C
°C
Note1: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEDEC
JEITA
TO-92MOD
―
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
TOSHIBA
2-5J1A
Weight: 0.36 g (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
1 2009-12-21
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SA966.PDF ] | |
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