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PDF 2SA812 Data sheet ( Hoja de datos )
| Número de pieza | 2SA812 | |
| Descripción | PNP SILICON EPITAXIAL TRANSISTOR | |
| Fabricantes | NEC | |
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DATA SHEET
SILICON TRANSISTOR
2SA812
PNP SILICON EPITAXIAL TRANSISTOR
MINI MOLD
PACKAGE DRAWING
(Unit: mm)
2.8 ±0.2
1.5 TYP.
0.65
+0.1
–0.15
2
13
FEATURES
• Complementary to 2SC1623
• High DC Current Gain: hFE = 200 TYP. (VCE = −6.0 V, IC = −1.0 mA) )
• High Voltage: VCEO = −50 V
QUALITY GRADE
Standard
Please refer to “Quality Grades on NEC Semiconductor Devices”
(Document No. C11531E) published by NEC Electronics Corporation to
know the specification of quality grade on the devices and its
recommended applications.
Marking
1. Emitter
2. Base
3. Collector
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Collector to Base Voltage
VCBO
−60
Collector to Emitter Voltage
VCEO
−50
Emitter to Base Voltage
VEBO
−5.0
Collector Current (DC)
IC −100
Total Power Dissipation
PT 200
Junction Temperature
Tj 150
Storage Temperature Range
Tstg −55 to +150
V
V
V
mA
mW
°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTIC
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector Saturation Voltage
Base to Emitter Voltage
Gain Bandwidth Product
Output Capacitance
SYMBOL
ICBO
IEBO
hFE
VCE(sat)
VBE
fT
Cob
MIN.
90
−0.58
TYP.
200
−0.18
−0.62
180
4.5
Note Pulsed: PW ≤ 350 µs, Duty Cycle ≤ 2%
hFE CLASSIFICATION
MAX.
−0.1
−0.1
600
−0.3
−0.68
Marking
hFE
M4
90 to 180
M5
135 to 270
M6
200 to 400
M7
300 to 600
UNIT
µA
µA
V
V
MHz
pF
TEST CONDITIONS
VCB = −60 V, IE = 0 A
VEB = −5.0 V, IC = 0 A
VCE = −6.0 V, IC = −1.0 mANote
IC = −100 mA, IB = −10 mA
VCE = 6.0 V, IC = −1.0 mA
VCE = −6.0 V, IE = 10 mA
VCE = −10 V, IE = 0 A, f = 1.0 MHz
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17119EJ2V0DS00 (2nd edition)
(Previous No. TC-1479B)
Date Published March 2004 N CP(K)
Printed in Japan
The mark shows major revised points.
c
1984
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SA812.PDF ] | |
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