|
|
Número de pieza | PZT194 | |
Descripción | Silicon Planar Medium Power Transistor | |
Fabricantes | SeCoS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de PZT194 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! Elektronische Bauelemente
Description
The PZT194 is designed for medium
wwpwo.DwateaSrheaemt4Up.nlieftier applications.
PZT194
NPN Transistor
Silicon Planar Medium Power Transistor
RoHS Compliant Product
SOT-223
Features
* 1 Amps Continous Current
* 60 Volt VCEO
* Complementary To PZT195
194
MAXIMUM RATINGS* (Tamb =25oC, unless otherwise specified)
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current (DC)
Collector Current (Pulse)
IB Base Current
PD Total Power Dissipation
TJ,Tstg
Junction and Storage Temperature
REF.
A
C
D
E
I
H
Millimeter
Min. Max.
6.70 7.30
2.90 3.10
0.02 0.10
0 10
0.60 0.80
0.25 0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min. Max.
13 TYP.
2.30 REF.
6.30 6.70
6.30 6.70
3.30 3.70
3.30 3.70
1.40 1.80
Value
80
60
5
1
2
200
2
-55~+150
Units
V
V
V
A
mA
W
CO
ELECTRICAL CHARACTERISTICS Tamb=25oC
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector-Base Cutoff Current
Symbol
BVCBO
*BVCEO
BVEBO
ICBO
IEBO
ICES
Min
80
60
5
-
-
-
Collector Saturation Voltage
Base Saturation Voltage
Base-Emitter Voltage
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
*VCE(sat)1
*VCE(sat)2
*VBE(sat)
*VBE(on)
*hFE1
*hFE2
*hFE3
*hFE4
fT
Cob
-
-
-
-
100
100
80
30
150
-
unless otherwise specified
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
-
-
-
100
100
100
0.25
0.5
1.1
1.0
-
300
-
-
-
10
Unit
V
V
V
nA
nA
nA
V
V
V
MHz
pF
Test Conditions
IC= 100µA, IE=0
IC= 10mA, IB=0
IE= 100µA, IC=0
VCB= 60V, IE=0
VEB=4V,I C=0
VCES = 60V
IC=500mA,IB=50 mA
I C= 1A,IB=100mA
I C= 1A,IB=100mA
I C= 1A,VCE=5V
VCE= 5 V, IC=1mA
VCE= 5 V, IC=500mA
VCE= 5 V, IC=1A
VCE= 5 V, IC=2A
VCE= 10V, IC= 50 mA, f=100MHz
VCB= 10V, f=1MHz,IE=0
*Measured under pulse condition. Pulse width 300µs, Duty Cycle 2%
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of 2
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet PZT194.PDF ] |
Número de pieza | Descripción | Fabricantes |
PZT194 | Silicon Planar Medium Power Transistor | SeCoS |
PZT195 | Medium Power Transistor | SeCoS |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |