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PDF BCP869 Data sheet ( Hoja de datos )
| Número de pieza | BCP869 | |
| Descripción | Plastic Encapsulated Transistor | |
| Fabricantes | SeCoS | |
| Logotipo |  |
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Elektronische Bauelemente
BCP869
PNP
Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
wwwT.hDeataBShCeePt48U6.n9et is designed for application required for high current (maximum -1 A) and low voltage (maximum -20 V).
PACKAGE DIMENSIONS
SOT-89
A
C
D
I
H
G
REF.
Millimeter
Min. Max.
REF.
Millimeter
Min. Max.
A 4.40 4.60 G
3.00 REF.
B 4.05 4.25 H
1.50 REF.
C 1.50 1.70 I 0.40 0.52
D 1.30 1.50 J 1.40 1.60
E 2.40 2.60 K 0.35 0.41
L
F 0.89 1.20 L
M
5° TYP.
0.70 REF.
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction & Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
Ratings
-32
-20
-5
-1
0.5
150, -55~150
Unit
V
V
V
A
W
°C
PNP ELECTRICAL CHARACTERISTICS at Ta = 25°C
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Base-emitter voltage
Collector-emitter saturation voltage
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
hFE(3)
VBE
VCE(sat)
fT
Min.
-32
-20
-5
-
-
50
100
60
-
-
40
Max.
-
-
-
-0.1
-0.1
-
375
-
-1
-0.5
-
Unit
V
V
V
μA
μA
V
V
MHz
Test Conditions
IC=-0.1mA, IE=0
IC= -1mA, IB=0
IE=-0.1mA, IC=0
VCB=-25V, IE=0
VEB=-5 V, IC=0
VCE=-10V, IC= -5mA
VCE=-1V, IC= -500mA
VCE=-1V, IC= -1A
VCE=-1V, IC= -1A
IC=-1A, IB= -100mA
VCE=-5V, IC=-10mA, f = 100MHz
CLASSIFICATION OF hFE2
Rank
Range
Marking
BC869
100 – 375
CEC
BC869-16
100 - 250
CGC
http://www.SeCoSGmbH.com/
01-June-2004 Rev. A
BC869-25
160 – 375
CHC
Any changes of specification will not be informed individually.
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