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PDF IDT03S60C Data sheet ( Hoja de datos )
| Número de pieza | IDT03S60C | |
| Descripción | Schottky Diode | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IDT03S60C (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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IDT03S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Features
• Revolutionary semiconductor material - Silicon Carbide
• No reverse recovery/ no forward recovery
• Temperature independent switching behavior
Product Summary
V DC
Qc
IF
• High surge current capability
• Qualified according to JEDEC1) for target applications
• Breakdown voltage tested at 5mA2)
• Optimized for high temperature operation
www.DataSheet4U.net
thinQ! 2G Diode designed for fast switching applications like:
• CCM PFC
600 V
5 nC
3A
PG-TO220-2-2
Type
IDT03S60C
Maximum ratings,
Parameter
Package
PG-TO220-2-2
Marking
D03S60C
Pin 1
C
Symbol Conditions
Pin 2
A
Value
Unit
Continuous forward current
IF
RMS forward current
I F,RMS
Surge non-repetitive forward current, I F,SM
sine halfwave
T C<120 °C
T C<70 °C
f =50 Hz
T C=25 °C, t p=10 ms
T C=150°C, t p=10 ms
Repetitive peak forward current
I F,RM
T j=150 °C,
T C=100 °C, D =0.1
Non-repetitive peak forward current
i ²t value
Repetitive peak reverse voltage
Diode dv/dt ruggedness
Power dissipation
Operating and storage temperature
Mounting torque
I F,max T C=25 °C, t p=10 µs
∫i 2dt
T C=25 °C, t p=10 ms
T C=150°C, t p=10 ms
V RRM T j=25 °C
dv/ dt V R = 0….480V
P tot T C=25 °C
T j, T stg
M3 and M3.5 screws
3
4.5
4.2
16
14
10.5
115
1.2
0.96
600
50
25
-55 ... 175
60
A
A2s
V
V/ns
W
°C
Mcm
Rev. 2.0
page 1
2007-04-25
1 page  
9 Typ. C stored energy
E C=f(V R)
2.5
2.0
1.5
1.0
0.5
0.0
0
100 200 300 400 500 600
V R [V]
IDT03S60C
Rev. 2.0
page 5
2007-04-25
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IDT03S60C.PDF ] | |
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