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PDF IDH09SG60C Data sheet ( Hoja de datos )
| Número de pieza | IDH09SG60C | |
| Descripción | Schottky Diode | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IDH09SG60C (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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3rd Generation thinQ!TM SiC Schottky Diode
Features
• Revolutionary semiconductor material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery / No forward recovery
• Temperature independent switching behavior
• High surge current capability
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Breakdown voltage tested at 20mA2)
• Optimized for high temperature operation
www.Dat•aSLhoeewt4eUs.nt eFt igure of Merit QC/IF
Product Summary
V DC
QC
I F; T C< 130 °C
thinQ! 3G Diode designed for fast switching applications like:
• SMPS e.g.; CCM PFC
• Motor Drives; Solar Applications; UPS
Type
IDH09SG60C
Package
PG-TO220-2
Marking
D09G60C
Pin 1
C
Pin 2
A
IDH09SG60C
600 V
15 nC
9A
Maximum ratings
Parameter
Symbol Conditions
Continuous forward current
IF
Surge non-repetitive forward current, I F,SM
sine halfwave
Non-repetitive peak forward current
i ²t value
I F,max
∫i 2dt
Repetitive peak reverse voltage
V RRM
T C<130 °C
T C=25 °C, t p=10 ms
T C=150 °C, t p=10 ms
T C=25 °C, t p=10 µs
T C=25 °C, t p=10 ms
T C=150 °C, t p=10 ms
T j=25 °C
Diode dv/dt ruggedness
dv/ dt VR= 0….480 V
Power dissipation
P tot T C=25 °C
Operating and storage temperature
Soldering temperature,
wavesoldering only allowed at leads
Mounting torque
T j, T stg
T sold
1.6mm (0.063 in.) from
case for 10s
M3 and M3.5 screws
Rev. 2.3
page 1
Value
9
49
42
400
12
9
600
50
115
-55 ... 175
260
60
Unit
A
A2s
V
V/ns
W
°C
Ncm
2009-08-04
1 page  
9 Typ. C stored energy
E C=f(V R)
8
7
6
5
4
3
2
1
0
0 150 300 450
V R [V]
600
IDH09SG60C
Rev. 2.3
page 5
2009-08-04
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IDH09SG60C.PDF ] | |
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