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PDF IDH08S120 Data sheet ( Hoja de datos )

Número de pieza IDH08S120
Descripción Schottky Diode
Fabricantes Infineon Technologies 
Logotipo Infineon Technologies Logotipo



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No Preview Available ! IDH08S120 Hoja de datos, Descripción, Manual

thinQ!TM SiC Schottky Diode
Features
• Revolutionary semiconductor material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery / No forward recovery
• Temperature independent switching behavior
• High surge current capability
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Optimized for high temperature operation
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IDH08S120
Product Summary
VDC
QC
IF; TC< 130 °C
1620000 V
32.72 nC
73.5 A
PG-TO220-2
thinQ!TM Diode designed for fast switching applications like:
• SMPS e.g.; CCM PFC
• Motor Drives; Solar Applications; UPS
Type
IDH08S120
Package
PG-TO220-2
Marking
D08S120
Pin 1
C
Pin 2
A
Maximum ratings
Parameter
Symbol Conditions
Continuous forward current
I F T C<130 °C
Surge non-repetitive forward current, I F,SM
sine halfwave
T C=25 °C, t p=10 ms
T C=150 °C, t p=10 ms
Non-repetitive peak forward current I F,max T C=25 °C, t p=10 µs
i ²t value
i 2dt
T C=25 °C, t p=10 ms
T C=150 °C, t p=10 ms
Repetitive peak reverse voltage
V RRM T j=25 °C
Diode dv/dt ruggedness
dv/ dt VR= 0….960 V
Power dissipation
P tot T C=25 °C
Operating and storage temperature
Soldering temperature,
wavesoldering only allowed at leads
Mounting torque
T j, T stg
T sold
1.6mm (0.063 in.)
from case for 10s
M3 and M3.5 screws
Value
7.5
39
33
160
7
5
1200
50
100
-55 ... 175
260
60
Unit
A
A2s
V
V/ns
W
°C
Mcm
Rev. 2.0
page 1
2010-04-20

1 page




IDH08S120 pdf
PG-TO220-2: Outline
IDH08S120
thinQ!TM 2G Diode designed for fast switching applications like:
Dimensions in mm/inches
Rev. 2.0
page 5
2010-04-20

5 Page










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PDF Descargar[ Datasheet IDH08S120.PDF ]




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