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PDF IDH03SG60C Data sheet ( Hoja de datos )

Número de pieza IDH03SG60C
Descripción Schottky Diode
Fabricantes Infineon Technologies 
Logotipo Infineon Technologies Logotipo



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No Preview Available ! IDH03SG60C Hoja de datos, Descripción, Manual

3rd Generation thinQ!TM SiC Schottky Diode
Features
• Revolutionary semiconductor material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery / No forward recovery
• Temperature independent switching behavior
• High surge current capability
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Breakdown voltage tested at 20mA2)
• Optimized for high temperature operation
• Lowest Figure of Merit QC/IF
Product Summary
VDC
QC
IF; TC< 130 °C
IDH03SG60C
600 V
3.2 nC
3A
thinQ! 3G Diode designed for fast switching applications like:
• SMPS e.g.; CCM PFC
• Motor Drives; Solar Applications; UPS
Type
IDH03SG60C
Package
PG-TO220-2
Marking
D03G60C
Pin 1
C
Pin 2
A
Maximum ratings
Parameter
Symbol Conditions
Continuous forward current
I F T C<130 °C
Surge non-repetitive forward current, I F,SM
sine halfwave
T C=25 °C, t p=10 ms
T C=150 °C, t p=10 ms
Non-repetitive peak forward current
i ²t value
I F,max
i 2dt
T C=25 °C, t p=10 µs
T C=25 °C, t p=10 ms
T C=150 °C, t p=10 ms
Repetitive peak reverse voltage
Diode dv/dt ruggedness
V RRM
dv/ dt
T j=25 °C
VR= 0….480 V
Power dissipation
P tot T C=25 °C
Operating and storage temperature
Soldering temperature,
wavesoldering only allowed at leads
Mounting torque
T j, T stg
T sold
1.6mm (0.063 in.)
from case for 10s
M3 and M3.5 screws
Value
3
11.5
9.7
100
0.61
0.44
600
50
38
-55 ... 175
260
60
Unit
A
A2s
V
V/ns
W
°C
Ncm
Rev. 2.3
page 1
2012-12-12

1 page




IDH03SG60C pdf
9 Typ. C stored energy
E C=f(V R)
1.8
1.5
1.3
1.0
0.8
0.5
0.3
0.0
0
200 400
VR [V]
600
IDH03SG60C
Rev. 2.3
page 5
2012-12-12

5 Page










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