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Número de pieza | IDH02SG120 | |
Descripción | Schottky Diode | |
Fabricantes | Infineon Technologies | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IDH02SG120 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! 3rd Generation thinQ!TM SiC Schottky Diode
Features
• Revolutionary semiconductor material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery / No forward recovery
• Temperature independent switching behavior
• High surge current capability
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Optimized for high temperature operation
• Lowest Figure of Merit QC/IF
www.DataSheet4U.net
IDH02SG120
Product Summary
V DC
QC
I F; T C< 130 °C
1620000 V
73.2 nC
23 A
PG-TO220-2
thinQ!TM 3G Diode designed for fast switching applications like:
• SMPS e.g.; CCM PFC
• Motor Drives; Solar Applications; UPS
Type
IDH02SG120
Package
PG-TO220-2
Marking
D02G120
Pin 1
C
Pin 2
A
Maximum ratings
Parameter
Symbol Conditions
Continuous forward current
IF
Surge non-repetitive forward current, I F,SM
sine halfwave
T C<130 °C
T C=25 °C, t p=10 ms
T C=150 °C, t p=10 ms
Non-repetitive peak forward current
i ²t value
I F,max
∫i 2dt
T C=25 °C, t p=10 µs
T C=25 °C, t p=10 ms
T C=150 °C, t p=10 ms
Repetitive peak reverse voltage
V RRM T j=25 °C
Diode dv/dt ruggedness
dv/ dt VR= 0….960 V
Power dissipation
P tot T C=25 °C
Operating and storage temperature
Soldering temperature,
wavesoldering only allowed at leads
Mounting torque
T j, T stg
T sold
1.6mm (0.063 in.) from
case for 10s
M3 and M3.5 screws
Rev. 2.0
page 1
Value
2
15
13
90
1.4
1.1
1200
50
75
-55 ... 175
260
60
Unit
A
A2s
V
V/ns
W
°C
Ncm
2009-09-04
1 page PG-TO220-2: Outline
IDH02SG120
Dimensions in mm/inches
Rev. 2.0
page 5
2009-09-04
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet IDH02SG120.PDF ] |
Número de pieza | Descripción | Fabricantes |
IDH02SG120 | Schottky Diode | Infineon Technologies |
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