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PDF IDD04SG60C Data sheet ( Hoja de datos )
| Número de pieza | IDD04SG60C | |
| Descripción | Schottky Diode | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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3rd Generation thinQ!TM SiC Schottky Diode
Features
• Revolutionary semiconductor material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery / No forward recovery
• Temperature independent switching behavior
• High surge current capability
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Breakdown voltage tested at 20mA2)
• Optimized for high temperature operation
• Lowest Figure of Merit QC/IF
Product Summary
VDC
QC
IF; TC< 130 °C
thinQ! 3G Diode designed for fast switching applications like:
• SMPS e.g.; CCM PFC
• Motor Drives; Solar Applications; UPS
IDD04SG60C
600 V
4.5 nC
4A
Type
IDD04SG60C
Package
PG-TO252-3
Marking
D04G60C
Pin 1
n.c.
Pin 2
A
Pin 3
C
Maximum ratings
Parameter
Symbol Conditions
Continuous forward current
I F T C<130 °C
Surge non-repetitive forward current, I F,SM
sine halfwave
T C=25 °C, t p=10 ms
T C=150 °C, t p=10 ms
Non-repetitive peak forward current
i ²t value
I F,max
∫i 2dt
T C=25 °C, t p=10 µs
T C=25 °C, t p=10 ms
T C=150 °C, t p=10 ms
Repetitive peak reverse voltage
Diode dv/dt ruggedness
V RRM
dv/ dt
T j=25 °C
VR= 0….480 V
Power dissipation
P tot T C=25 °C
Operating and storage temperature
Soldering temperature, reflow
soldering (max)
T j, T stg
T sold
reflow MSL1
Value
4
18
13.5
120
1.8
0.93
600
50
43
-55 ... 175
260
Unit
A
A2s
V
V/ns
W
°C
Rev. 2.4
page 1
2013-02-11
1 page  
9 Typ. C stored energy
E C=f(V R)
2.5
2.0
1.5
1.0
0.5
0.0
0
200 400
VR [V]
600
IDD04SG60C
Rev. 2.4
page 5
2013-02-11
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IDD04SG60C.PDF ] | |
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