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PDF 2SB0950A Data sheet ( Hoja de datos )
| Número de pieza | 2SB0950A | |
| Descripción | Power Transistors | |
| Fabricantes | Panasonic Semiconductor | |
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Power Transistors
2SB0950 (2SB950), 2SB0950A (2SB950A)
wwwS.DaitlaiSchoeetn4UP.neNt P epitaxial planar type darlington
For power amplification and switching
Complementary to 2SD1276 and 2SD1276A
■ Features
• High forward current transfer ratio hFE
• High-speed switching
• Full-pack package which can be installed to the heat sink with one screw
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ 3.1±0.1
■ Absolute Maximum Ratings TC = 25°C
1.4±0.1
1.3±0.2
Parameter
Symbol Rating
Collector-base voltage
(Emitter open)
2SB0950 VCBO
2SB0950A
−60
−80
Collector-emitter voltage 2SB0950 VCEO
(Base open)
2SB0950A
−60
−80
Emitter-base voltage (Collector open)
Collector current
Peak collector current
VEBO
IC
ICP
−5
−4
−8
Collector power
PC 40
dissipation
Ta = 25°C
2
Junction temperature
Tj 150
Storage temperature
Tstg −55 to +150
■ Electrical Characteristics TC = 25°C ± 3°C
Unit
V
V
V
A
A
W
°C
°C
0.8±0.1
0.5+–00..12
2.54±0.3
5.08±0.5
1: Base
2: Collector
123
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
Internal Connection
C
B
E
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage
(Base open)
2SB0950 VCEO
2SB0950A
IC = −30 mA, IB = 0
−60
−80
V
Base-emitter voltage
VBE VCE = −3 V, IC = −3 A
−2.5 V
Collector-base cutoff
2SB0950 ICBO VCB = −60 V, IE = 0
−200 µA
current (Emitter open)
2SB0950A
VCB = −80 V, IE = 0
−200
Collector-emitter cutoff 2SB0950 ICEO VCE = −30 V, IB = 0
−500 µA
current (Base open)
2SB0950A
VCE = −40 V, IB = 0
−500
Emitter-base cutoff current (Collector open) IEBO VEB = −5 V, IC = 0
−2 mA
Forward current transfer ratio
hFE1 VCE = −3 V, IC = − 0.5 A
1 000
hFE2 * VCE = −3 V, IC = −3 A
1 000
10 000
Collector-emitter saturation voltage VCE(sat)1 IC = −3 A, IB = −12 mA
−2 V
VCE(sat)2 IC = −5 A, IB = −20 mA
−4 V
Transition frequency
fT VCE = −10 V, IC = − 0.5 A, f = 1 MHz 20 MHz
Turn-on time
ton IC = −3 A, IB1 = −12 mA, IB2 = 12 mA
0.3
µs
Storage time
tstg VCC = −50 V
2 µs
Fall time
tf
0.5 µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
R
Q
P
hFE2 1 000 to 2 500 2 000 to 5 000 4 000 to 10 000
Note) The part numbers in the parenthesis show conventional part number.
Publication date: April 2003
c
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| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SB0950A.PDF ] | |
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