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PDF 2SB949A Data sheet ( Hoja de datos )
| Número de pieza | 2SB949A | |
| Descripción | Power Transistors | |
| Fabricantes | Panasonic Semiconductor | |
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Power Transistors
2SB0949 (2SB949), 2SB0949A (2SB949A)
wwwS.DaitlaiSchoeetn4UP.neNt P epitaxial planar type darlington
For power amplification and switching
Complementary to 2SD1275 and 2SD1275A
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
■ Features
• High forward current transfer ratio hFE
• High-speed switching
• Full-pack package which can be installed to the heat sink with one screw
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage
(Emitter open)
2SB0949
2SB0949A
Collector-emitter voltage 2SB0949
(Base open)
2SB0949A
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power
dissipation
TC = 25°C
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
−60
−80
−60
−80
−5
−2
−4
35
2
150
−55 to +150
V
V
V
A
A
W
°C
°C
■ Electrical Characteristics Ta = 25°C ± 3°C
φ 3.1±0.1
1.4±0.1
0.8±0.1
1.3±0.2
0.5+–00..12
2.54±0.3
5.08±0.5
1: Base
2: Collector
123
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
Internal Connection
B
C
E
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage
(Base open)
2SB0949 VCEO
2SB0949A
IC = −30 mA, IB = 0
−60
−80
V
Base-emitter voltage
Collector-base cutoff
current (Emitter open)
2SB0949
2SB0949A
VBE
ICBO
Collector-emitter cutoff
current (Base open)
2SB0949 ICEO
2SB0949A
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
IEBO
hFE1
hFE2 *
VCE(sat)
fT
ton
tstg
tf
VCE = −4 V, IC = −2 A
VCB = −60 V, IE = 0
VCB = −80 V, IE = 0
VCE = −30 V, IB = 0
VCE = −40 V, IB = 0
VEB = −5 V, IC = 0
VCE = −4 V, IC = −1 A
VCE = −4 V, IC = −2 A
IC = −2 A, IB = −8 mA
VCE = −10 V, IC = − 0.5 A, f = 1 MHz
IC = −2 A, IB1 = −8 mA, IB2 = 8 mA
VCC = −50 V
1 000
1 000
−2.8 V
−1 mA
−1
−2 mA
−2
−2 mA
10 000
−2.5 V
20 MHz
0.4 µs
1.5 µs
0.5 µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
R
Q
P
hFE2 1 000 to 2 500 2 000 to 5 000 4 000 to 10 000
Note) The part numbers in the parenthesis show conventional part number.
Publication date: April 2003
SJD00028BED
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SB949A.PDF ] | |
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