|
|
PDF 2SB0948 Data sheet ( Hoja de datos )
| Número de pieza | 2SB0948 | |
| Descripción | Power Transistors | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de 2SB0948 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
|
No Preview Available !
Power Transistors
2SB0948 (2SB948), 2SB0948A (2SB948A)
wwwS.DaitlaiScheoetn4U.nPetNP epitaxial planar type
For low-voltage switching
■ Features
• Low collector-emitter saturation voltage VCE(sat)
• High-speed switching
• Full-pack package which can be installed to the heat sink with one screw
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ 3.1±0.1
■ Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Collector-base voltage
(Emitter open)
2SB0948 VCBO
2SB0948A
−40
−50
Collector-emitter voltage 2SB0948 VCEO
(Base open)
2SB0948A
−20
−40
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Ta = 25°C
Storage temperature
VEBO
IC
ICP
PC
Tj
Tstg
−5
−10
−20
40
2
150
−55 to +150
Unit
V
V
V
A
A
W
°C
°C
1.4±0.1
0.8±0.1
1.3±0.2
0.5+–00..12
2.54±0.3
5.08±0.5
1: Base
2: Collector
123
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage
(Base open)
2SB0948 VCEO
2SB0948A
IC = −10 mA, IB = 0
−20
−40
V
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
ICBO
IEBO
hFE1
hFE2 *
VCE(sat)
VBE(sat)
fT
Cob
VCB = −40 V, IE = 0
VEB = −5 V, IC = 0
VCE = −2 V, IC = − 0.1 A
VCE = −2 V, IC = −3 A
IC = −10 A, IB = − 0.33 A
IC = −10 A, IB = − 0.33 A
VCE = −10 V, IC = − 0.5 A, f = 10 MHz
VCB = −10 V, IE = 0, f = 1 MHz
45
60
−50 µA
−50 µA
260
− 0.6 V
−1.5 V
100 MHz
400 pF
Turn-on time
Storage time
Fall time
ton IC = −3 A, IB1 = − 0.1 A, IB2 = 0.1 A 0.1 µs
tstg VCC = −20 V
0.5 µs
tf 0.1 µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
R
Q
P
hFE2
60 to 120
90 to 180
130 to 260
Note) The part numbers in the parenthesis show conventional part number.
Publication date: April 2003
SJD00027BED
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SB0948.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 2SB0940 | Power Transistors | Panasonic Semiconductor |
| 2SB0940A | Power Transistors | Panasonic Semiconductor |
| 2SB0942 | Power Transistors | Panasonic Semiconductor |
| 2SB0942A | Power Transistors | Panasonic Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |