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PDF 2SB940A Data sheet ( Hoja de datos )

Número de pieza 2SB940A
Descripción Power Transistors
Fabricantes Panasonic Semiconductor 
Logotipo Panasonic Semiconductor Logotipo



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No Preview Available ! 2SB940A Hoja de datos, Descripción, Manual

Power Transistors
2SB0940 (2SB940), 2SB0940A (2SB940A)
wwwS.DaitlaiScheoetn4U.nPetNP epitaxial planar type
For power amplification
For TV vertical deflection output
Complementary to 2SD1264, 2SD1264A
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
Features
High collector-emitter voltage (Base open) VCEO
Large collector power dissipation PC
Full-pack package which can be installed to the heat sink with one screw
Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage 2SB0940
(Base open)
2SB0940A
VCBO
VCEO
200
150
180
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power
dissipation
Junction temperature
Ta = 25°C
Storage temperature
VEBO
IC
ICP
PC
Tj
Tstg
6
2
3
30
2
150
55 to +150
Unit
V
V
V
A
A
W
°C
°C
φ 3.1±0.1
1.4±0.1
0.8±0.1
1.3±0.2
0.5+–00..12
2.54±0.3
5.08±0.5
1: Base
123
2: Collector
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage 2SB0940
(Base open)
2SB0940A
VCBO
VCEO
IC = −50 µA, IE = 0
IC = −5 mA, IB = 0
200
150
180
V
V
Emitter-base voltage (Collector open)
Base-emitter voltage
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
VEBO
VBE
ICBO
IEBO
hFE1 *
hFE2
VCE(sat)
fT
IE = −500 µA, IC = 0
VCE = −10 V, IC = −400 mA
VCB = −200 V, IE = 0
VEB = −4 V, IC = 0
VCE = −10 V, IC = −150 mA
VCE = −10 V, IC = −400 mA
IC = −500 mA, IB = −50 mA
VCE = −10 V, IC = − 0.5 A, f = 10 MHz
6
60
50
V
1 V
50 µA
50 µA
240
1 V
30 MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
P
hFE1
60 to 140
100 to 240
Note) The part numbers in the parenthesis show conventional part number.
Publication date: February 2003
SJD00021BED
1

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