|
|
Número de pieza | 2SB931 | |
Descripción | Power Transistors | |
Fabricantes | Panasonic Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SB931 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! Power Transistors
2SB0931 (2SB931)
wwwS.DaitlaiScheoetn4U.nPetNP epitaxial planar type
For Power switching
Complementary to 2SD1254
8.5±0.2
6.0±0.2
Unit: mm
3.4±0.3
1.0±0.1
■ Features
• Low collector-emitter saturation voltage VCE(sat)
• Satisfactory linearity of forward current transfer ratio hFE
• Large collector current IC
• N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment.
■ Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Ta = 25°C
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
−130
−80
−7
−3
−6
30
1.3
150
−55 to +150
Unit
V
V
V
A
A
W
°C
°C
0 to 0.4
0.8±0.1
2.54±0.3
1.4±0.1
R = 0.5
R = 0.5
1.0±0.1
0.4±0.1
5.08±0.5
123
(8.5)
(6.0)
1.3
(6.5)
1: Base
2: Collector
3: Emitter
N-G1 Package
Note) Self-supported type package is also prepared.
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Base-emitter voltage
Collector-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
VCEO
ICBO
IEBO
hFE1
hFE2 *
VBE(sat)
VCE(sat)
fT
ton
tstg
tf
IC = −10 mA, IB = 0
VCB = −100 V, IE = 0
VEB = −5 V, IC = 0
VCE = −2 V, IC = − 0.1 A
VCE = −2 V, IC = − 0.5 A
IC = −2 A, IB = − 0.1 A
IC = −2 A, IB = − 0.1 A
VCE = −10 V, IC = − 0.5 A, f = 10 MHz
IC = − 0.5 A,
IB1 = −50 mA, IB2 = 50 mA
VCC = −50 V
−80
45
90
V
−10 µA
−50 µA
260
−1.5 V
− 0.5 V
30 MHz
0.3 µs
1.1 µs
0.3 µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
P
hFE2
90 to 180
130 to 260
Publication date: April 2003
Note) The part number in the parenthesis shows conventional part number.
SJD00013BED
1
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet 2SB931.PDF ] |
Número de pieza | Descripción | Fabricantes |
2SB930 | Silicon PNP epitaxial planar type(For power amplification) | Panasonic Semiconductor |
2SB930 | Transistor | TY Semiconductor |
2SB930A | Silicon PNP epitaxial planar type(For power amplification) | Panasonic Semiconductor |
2SB930A | Transistor | Kexin |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |