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PDF 2SB0928A Data sheet ( Hoja de datos )
| Número de pieza | 2SB0928A | |
| Descripción | Power Transistors | |
| Fabricantes | Panasonic Semiconductor | |
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Power Transistors
2SB0928 (2SB928), 2SB0928A (2SB928A)
wwwS.DaitlaiScheoetn4U.nPetNP epitaxial planar type
For Power amplification
For TV vertical deflection output
Complementary to 2SD1250 and 2SD1250A
8.5±0.2
6.0±0.2
Unit : mm
3.4±0.3
1.0±0.1
■ Features
• High collector-emitter voltage (Base open) VCEO
• High collector power dissipation PC
• N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment.
0 to 0.4
0.8±0.1
2.54±0.3
1.4±0.1
R = 0.5
R = 0.5
1.0±0.1
0.4±0.1
5.08±0.5
123
(8.5)
(6.0)
1.3
■ Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage 2SB0928
(Base open)
2SB0928A
VCBO
VCEO
−200
−150
−180
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power
dissipation
Junction temperature
Ta = 25°C
Storage temperature
VEBO
IC
ICP
PC
Tj
Tstg
−6
−2
−3
30
1.3
150
−55 ∼ +150
Unit
V
V
V
A
A
W
°C
°C
(6.5)
1 : Base
2 : Collector
3 : Emitter
N-G1 Package
Note) Self-supported type package is also prepared
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage 2SB0928
(Base open)
2SB0928A
VCBO
VCEO
IC = −500 µA, IE = 0
IC = −5 mA, IB = 0
−200
−150
−180
V
V
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Base-emitter voltage
Collector-emitter saturation voltage
Transition frequency
VEBO
ICBO
IEBO
hFE1 *
hFE2
VBE
VCE(sat)
fT
IE = −500 µA, IC = 0
VCB = −200 V, IE = 0
VEB = −4 V, IC = 0
VCE = −10 V, IC = −150 mA
VCE = −10 V, IC = −400 mA
VCE = −10 V, IC = −400 mA
IC = −500 mA, IB = −50 mA
VCE = −10 V, IC = − 0.5 A, f = 10 MHz
−6
60
50
V
−50 µA
−50 µA
240
−1.0 V
−1.0 V
40 MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
P
hFE1
60 to 140
100 to 240
Note) The part numbers in the parenthesis show conventional part number.
Publication date: February 2003
SJD00010BED
1
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