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PDF IPB081N06L3G Data sheet ( Hoja de datos )

Número de pieza IPB081N06L3G
Descripción Power-Transistor
Fabricantes Infineon Technologies 
Logotipo Infineon Technologies Logotipo



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No Preview Available ! IPB081N06L3G Hoja de datos, Descripción, Manual

Type
OptiMOS3 Power-Transistor
Features
• Ideal for high frequency switching and sync. rec.
• Optimized technology for DC/DC converters
• Excellent gate charge x R DS(on) product (FOM)
• N-channel, logic level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Halogen-free according to IEC61249-2-21
IPB081N06L3 G IPP084N06L3 G
IPI084N06L3 G
Product Summary
VDS
RDS(on),max (SMD)
ID
60 V
8.1 mΩ
50 A
Type
IPB081N06L3 G
IPP084N06L3 G
IPI084N06L3 G
Package
Marking
PG-TO263-3
081N06L
PG-TO220-3
084N06L
PG-TO262-3
084N06L
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Continuous drain current
Pulsed drain current3)
Avalanche energy, single pulse4)
Gate source voltage
Power dissipation
Operating and storage temperature
I D T C=25 °C2)
T C=100 °C
I D,pulse T C=25 °C
E AS I D=50 A, R GS=25 Ω
V GS
P tot T C=25 °C
T j, T stg
1)J-STD20 and JESD22
2) Current is limited by bondwire; with an R thJC=1.9 K/W the chip is able to carry 73 A.
3) See figure 3 for more detailed information
4) See figure 13 for more detailed information
50
50
200
43
±20
79
-55 ... 175
Unit
A
mJ
V
W
°C
Rev. 2.24
page 1
2012-11-28

1 page




IPB081N06L3G pdf
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
200
180
7V
10 V 6 V
5V
160
140
120
4.5 V
100
80
4V
60
40 3.5 V
20
3V
0
01234
VDS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
120
IPB081N06L3 G IPP084N06L3 G
IPI084N06L3 G
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
17
16
3.5 V
4V
4.5 V
5V
15
14
13
12
11
10
9 6V
8 7V
7 10 V
6
5
5 0 50 100 150 200
ID [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
100
100
80
60
40
20
0
0
Rev. 2.24
175 °C
25 °C
24
VGS [V]
80
60
40
20
0
60
page 5
50 100
ID [A]
150
2012-11-28

5 Page





IPB081N06L3G arduino
IPB081N06L3 G IPP084N06L3 G
IPI084N06L3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.24
page 11
2012-11-28

11 Page







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