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Número de pieza L507
Descripción HiPerFRED Epitaxial Diode with soft recovery
Fabricantes IXYS Corporation 
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No Preview Available ! L507 Hoja de datos, Descripción, Manual

DSEP 2x 101-04A
HiPerFREDTM Epitaxial Diode
with soft recovery
IFAV = 2x 100 A
VRRM = 400 V
trr = 30 ns
VRSM
V
400
VRRM
V
400
Type
DSEP 2x 101-04A
miniBLOC, SOT-227 B
D4
Symbol
IFRMS
IFAVM
IFSM
EAS
IAR
TVJ
TVJM
Tstg
Ptot
VISOL
M
d
Weight
Conditions
TC = 60°C; rectangular, d = 0.5
TVJ = 45°C; tp = 10 ms (50 Hz), sine
TVJ = 25°C; non-repetitive
IAS = 4 A; L = 180 µH
VA = 1.5·VR typ.; f = 10 kHz; repetitive
TC = 25°C
50/60 Hz, RMS
IISOL 1 mA
mounting torque (M4)
terminal connection torque (M4)
typical
Maximum Ratings
100 A
100 A
1000
2
A
mJ
0.4
-40...+150
150
-40...+150
200
2500
A
°C
°C
°C
W
V~
1.1-1.5/9-13
1.1-1.5/9-13
30
Nm/lb.in.
Nm/lb.in.
g
Symbol
IR
VF
RthJC
RthCH
trr
IRM
Conditions
VR = VRRM; TVJ = 25°C
TVJ = 150°C
IF = 100 A; TVJ = 125°C
TVJ = 25°C
with heatsink compound
IF = 1 A; -di/dt = 400 A/µs;
VR = 30 V; TVJ = 25°C
VR = 100 V; IF = 200 A; -diF/dt = 100 A/µs
TVJ = 100°C
Characteristic Values
typ. max.
1 mA
4 mA
1.24
1.54
V
V
0.6 K/W
0.1 K/W
30 ns
5.5 6.8 A
Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 %
Pulse Width = 300 µs, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions.
© 2003 IXYS All rights reserved
Features
International standard package
miniBLOC
Isolation voltage 2500 V~
UL registered E 72873
2 independent FRED in 1 package
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low I -values
RM
Soft recovery behaviour
Applications
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Advantages
Avalanche voltage rated for reliable
operation
Soft reverse recovery for low
EMI/RFI
Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Dimensions see Outlines.pdf
1-2

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