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PDF U421 Data sheet ( Hoja de datos )
| Número de pieza | U421 | |
| Descripción | Low Leakage | |
| Fabricantes | Micross | |
| Logotipo |  |
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U421
HIGH INPUT IMPEDANCE
MONOLITHIC DUAL
N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix U421
The U421 is a high input impedance Monolithic Dual N-Channel JFET
The U421 monolithic dual n-channel JFET is designed
to provide very high input impedance for differential
amplification and impedance matching. Among its
many unique features, this series offers operating gate
current specified at -250 fA. The U421 is a direct
replacement for discontinued Siliconix U421.
FEATURES
HIGH INPUT IMPEDANCE
HIGH GAIN
LOW POWER OPERATION
ABSOLUTE MAXIMUM RATINGS
@ 25°C (unless otherwise noted)
IG = 0.25pA MAX
gfs = 120µmho MIN
VGS(OFF) = 2V MAX
The hermetically sealed TO-71 & TO-78 packages are
well suited for military applications. The 8 Pin P-DIP
and 8 Pin SOIC provide ease of manufacturing, and the
symmetrical pinout prevents improper orientation.
Maximum Temperatures
Storage Temperature
‐65°C to +150°C
Operating Junction Temperature
+150°C
Maximum Voltage and Current for Each Transistor – Note 1
(See Packaging Information).
‐VGSS
‐VDSO
‐IG(f)
Gate Voltage to Drain or Source
Drain to Source Voltage
Gate Forward Current
40V
40V
10mA
U421 Applications:
Maximum Power Dissipation
Device Dissipation @ Free Air – Total 400mW @ +125°C
Ultra Low Input Current Differential Amps
High-Speed Comparators
Impedance Converters
MATCHING CHARACTERISTICS @ 25°C UNLESS OTHERWISE NOTED
SYMBOL
CHARACTERISTICS VALUE UNITS CONDITIONS
|∆V GS1‐2 /∆T|max.
| V GS1‐2 | max.
DRIFT VS.
TEMPERATURE
OFFSET VOLTAGE
10 µV/°C VDG=10V, ID=30µA
TA=‐55°C to +125°C
10 mV VDG=10V, ID=30µA
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
MIN.
TYP. MAX.
UNITS
CONDITIONS
BVGSS
Breakdown Voltage
40 60 ‐‐
V
VDS = 0 IG =1nA
BVGGO
YfSS
YfS
Click
Gate‐To‐Gate Breakdown
TRANSCONDUCTANCE
Full Conduction
Typical Operation
DRAIN CURRENT
40
300
120
IDSS
Full Conduction
60
To Buy‐‐ ‐‐
‐‐ 1500
200 350
V
µmho
µmho
IG = 1µA ID = 0 IS= 0
VDS = 10V VGS = 0V f = 1kHz
VDG = 10V ID = 30µA f = 1kHz
‐‐ 1000
µA
VDS = 10V VGS = 0V
GATE VOLTAGE
VGS(off)
Pinchoff voltage
‐‐ ‐‐ 2.0
V
VDS = 10V ID = 1nA
VGS
Operating Range
‐‐ ‐‐ 1.8
V VDG = 10V ID = 30µA
GATE CURRENT
IGmax.
‐IGmax.
IGSSmax.
‐IGSSmax.
Operating
High Temperature
At Full Conduction
High Temperature
‐‐ ‐‐ .25
‐‐ ‐‐ 250
‐‐ ‐‐ 1.0
‐‐ ‐‐ 1.0
pA VDG = 10V ID = 30µA
pA TA = +125°C
pA VDS = 0V VGS = 20V
nA TA = +125°C
OUTPUT CONDUCTANCE
YOSS Full Conduction ‐‐
YOS Operating ‐‐
COMMON MODE REJECTION
‐‐ 10
0.1 3.0
µmho
µmho
VDS = 10V VGS = 0V
VDG = 10V ID = 30µA
CMR
‐20 log | ∆V GS1‐2/ ∆VDS|
‐‐
90 ‐‐
‐20 log | ∆V GS1‐2/ ∆VDS| ‐‐ 90 ‐‐
NOISE
NF Figure ‐‐ ‐‐ 1
dB ∆VDS = 10 to 20V ID = 30µA
dB ∆VDS = 5 to 10V ID = 30µA
VDG = 10V ID = 30µA RG = 10MΩ
dB f = 10Hz
en
Voltage
‐‐
20 70
nV/√Hz
VDG = 10V ID = 30µA f = 10Hz
‐‐ 10 ‐‐
VDG = 10V ID = 30µA f = 1KHz
CAPACITANCE
CISS Input
CRSS Reverse Transfer
‐‐ ‐‐ 3.0
‐‐ ‐‐ 1.5
pF
pF
VDS= 10V VGS = 0 f = 1MHz
Note 1 – These ratings are limiting values above which the serviceability of any semiconductor may be impaired
Available Packages:
TO-71 / TO-78 (Top View)
P-DIP / SOIC (Top View)
U421 in TO-71 & TO-78
U421 in PDIP & SOIC
UPl4e2a1seacvowanilatwabcletwMa.sicDrboaasrsetafdoSirehfulel peatc4kUag.ecaonmd die dimensions
Email: [email protected]
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
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