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PDF 903BDG Datasheet ( Hoja de datos )

Número de pieza 903BDG
Descripción P0903BDG
Fabricantes Niko-Sem 
Logotipo Niko-Sem Logotipo

Total 5 Páginas
		
903BDG Hoja de datos, Descripción, Manual
NIKO-SEM
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
P0903BDG
TO-252 (DPAK)
Lead-Free
D
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
25 9.5m
ID
50A
G
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
Lead Temperature (1/16” from case for 10 sec.)
VGS
ID
IDM
IAR
EAS
EAR
PD
Tj, Tstg
TL
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RθJC
Junction-to-Ambient
RθJA
Case-to-Heatsink
RθCS
1Pulse width limited by maximum junction temperature.
2Duty cycle 1
TYPICAL
0.6
1. GATE
2. DRAIN
3. SOURCE
LIMITS
±20
50
35
200
40
250
8.6
50
30
-55 to 150
275
UNITS
V
A
mJ
W
°C
MAXIMUM
2.5
62.5
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
STATIC
VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
VDS = 0V, VGS = ±20V
VDS = 20V, VGS = 0V
VDS = 20V, VGS = 0V, TC = 125 °C
LIMITS
UNIT
MIN TYP MAX
25
1 1.6
3
V
±250 nA
25
µA
250
1 SEP-24-2004

1 page

903BDG pdf
NIKO-SEM
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
P0903BDG
TO-252 (DPAK)
Lead-Free
TO-252 (DPAK) MECHANICAL DATA
mm mm
Dimension
Dimension
Min. Typ. Max.
Min. Typ. Max.
A 9.35
10.4 H 0.89
2.03
B 2.2
2.4 I 6.35
6.80
C 0.45
0.6 J 5.2
5.5
D 0.89
1.5 K 0.6
1
E 0.45
0.69
L
0.5
0.9
F 0.03
0.23
M
3.96
4.57
5.18
G 5.2
6.2 N
A
HG
K
5 SEP-24-2004

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