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PDF 2N5911 Data sheet ( Hoja de datos )
| Número de pieza | 2N5911 | |
| Descripción | High Gain | |
| Fabricantes | Micross | |
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2N5911
MONOLITHIC DUAL
N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix & National 2N5911
The 2N5911 are monolithic dual JFETs. The monolithic
dual chip design reduces parasitics and gives better
performance at very high frequencies while ensuring
extremely tight matching. These devices are an
excellent choice for use as wideband differential
amplifiers in demanding test and measurement
applications. The 2N5911 is a direct replacement for
discontinued Siliconix and National 2N5911.
FEATURES
Improved Direct Replacement for SILICONIX & NATIONAL 2N5911
LOW NOISE (10KHz)
HIGH TRANSCONDUCTANCE (100MHz)
ABSOLUTE MAXIMUM RATINGS 1
en~ 4nV/√Hz
gfs ≥ 4000µS
@ 25°C (unless otherwise noted)
Maximum Temperatures
The hermetically sealed TO-71 is well suited for military
and harsh environment applications.
(See Packaging Information).
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation (Total)
‐65°C to +150°C
‐55°C to +135°C
500mW
2N5911 Applications:
Wideband Differential Amps
High-Speed,Temp-Compensated Single-
Ended Input Amps
High-Speed Comparators
Impedance Converters and vibrations
detectors.
Maximum Currents
Gate Current
Maximum Voltages
Gate to Drain
Gate to Source
50mA
‐25V
‐25V
MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated)
SYMBOL
CHARACTERISTIC
MIN TYP MAX UNITS CONDITIONS
|VGS1 – VGS2 |
Differential Gate to Source Cutoff Voltage
‐‐ ‐‐
∆|VGS1 – VGS2 | / ∆T
Differential Gate to Source Cutoff
Voltage Change with Temperature
‐‐ ‐‐
IDSS1 / IDSS2
|IG1 – IG2 |
Click Togfs1 / gfs2
Gate to Source Saturation Current Ratio
Differential Gate Current
Forward Transconductance Ratio2
0.95
‐‐
0.95
‐‐
‐‐
‐‐
10 mV VDG = 10V, ID = 5mA
20 µV/°C VDG = 10V, ID = 5mA
TA = ‐55°C to +125°C
Buy1 % VDS = 10V, VGS = 0V
20 nA VDG = 10V, ID = 5mA
TA = +125°C
1 % VDS = 10V, ID = 5mA, f = 1kHz
CMRR
Common Mode Rejection Ratio
‐‐ 85
‐‐
dB VDG = 5V to 10V, ID = 5mA
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
MIN.
BVGSS
VGS(off)
VGS(F)
VGS
IDSS
IGSS
IG
Gate to Source Breakdown Voltage
Gate to Source Cutoff Voltage
Gate to Source Forward Voltage
Gate to Source Voltage
Gate to Source Saturation Current3
Gate Leakage Current3
Gate Operating Current
‐25
‐1
‐‐
‐0.3
7
‐‐
‐‐
TYP.
‐‐
‐‐
0.7
‐‐
‐‐
‐1
‐1
MAX.
‐5
‐‐
‐4
40
‐50
‐50
UNITS
V
mA
pA
CONDITIONS
IG = ‐1µA, VDS = 0V
VDS = 10V, ID = 1nA
IG = 1mA, VDS = 0V
VDG = 10V, IG = 5mA
VDS = 10V, VGS = 0V
VGS = ‐15V, VDS = 0V
VDG = 10V, ID = 5mA
gfs
Forward Transconductance
4000
‐‐ 10000
4000
‐‐ 10000 µS
gos
Output Conductance
‐‐
‐‐ 100
‐‐ ‐‐ 150
VDG = 10V, ID= 5mA
CISS
Input Capacitance
‐‐ ‐‐ 5 pF
VDG = 10V, ID = 5mA, f = 1MHz
CRSS
Reverse Transfer Capacitance
‐‐
‐‐ 1.2
NF
Noise Figure
‐‐ ‐‐ 1 dB VDG = 10V, ID = 5mA, f = 10kHz, RG = 100KΩ
en
Equivalent Input Noise Voltage
‐‐
7 20 nV/√Hz
VDG = 10V, ID = 5mA, f = 100Hz
‐‐ 4 10
VDG = 10V, ID = 5mA, f = 10kHz
Notes: 1. Absolute Maximum ratings are limiting values above which serviceability may be impaired 2. Pulse Test: PW ≤ 300µs Duty Cycle ≤ 3%
3. Assumes smaller value in numerator
Available Packages:
TO-71 (Top View)
Please contact Micross for full package and die dimensions:
2N5911 in TO-71
2N5911 available as bare die
Email: [email protected]
Web: www.micross.com/distribution.aspx
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
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