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PDF SB15100TL Data sheet ( Hoja de datos )

Número de pieza SB15100TL
Descripción (SB1520TL - SB15100TL) Schottky barrier rectifier diodes
Fabricantes Semikron International 
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SB1520TL..SB15100TL
Type
Repetitive
peak
reverse
voltage
Surge peak
reverse
voltage
Max.
reverse
recovery
time
Max.
forward
voltage
Max.
forward
voltage
Axial Lead Diode
Schottky barrier rectifier
diodes
Forward Current: 15 A
Reverse Voltage: 20 to 100 V
SB1520TL..SB15100TL
Features
Max. solder temperature: 260°C
Plastic material has UL
classification 94V-0
Electrostatic discharge immunity
test IEC 1000-4-2 (C=150 pF, R=150
Ohm): voltage class 20 kV
Typical Applications*
• Designed as Bypass Diodes for Solar
Panels, protection application
Mechanical Data
• Plastic case: 8 x 7,5 [mm]
• Weight approx.: 2 g
• Terminals: plated terminals solderable
per MIL-STD-750
• Mounting position: any
• Standard packaging: 500 pieces per
ammo or 1000 pieces per reel
Footnotes
1) IF = - A, IR = - A, IRR = - A
2) IF = 5 A, Tj = 25 °C
3) IF = 15 A, Tj = 25 °C
4) Valid, if leads are kept at TA at a distance
of 0 mm from case
5) Max. junction temperature Tj 200 °C in
bypass mode / DC forward mode
6) Thermal resistance from junction to lead/
terminal at distance 0 mm from case
VRRM
VRSM
trr1)
VF2)
VF3)
VV
ns V
V
SB 1520TL 20
20
-
0,43 0,52
SB 1530TL 30
30
-
0,43 0,52
SB 1540TL 40
40
-
0,43 0,52
SB 1545TL 45
45
-
0,43 0,52
SB 1550TL 50
50
-
0,6 -
SB 1560TL 60
60
-
0,6 -
SB 1590TL 90
90
-
0,74 -
SB 15100TL 100
100
-
0,74 -
Absolute Maximum Ratings
Symbol Conditions
Ta = 25 °C, unless otherwise specified
IFAV R-load, 4), Ta = 50 °C
IFRM
f > 15 Hz, 4)
IFSM half sinus-wave tp = 10 ms
Ta = 25 °C
tp = 8.3 ms
i2t
Ta = 25 °C
tp = 10 ms
tp = 8.3 ms
Tj Operating junction temperature
Tj DC forward (bypass) mode 5)
Tstg Storage temperature
Values
15
60
350
613
-50 ... +150
-50 ... +200
-50 ... +175
Unit
A
A
A
A
A²s
A²s
°C
°C
°C
Characteristics
Symbol Conditions
min. typ. max. Unit
Ta = 25 °C, unless otherwise specified
IR Tj = 25 °C, VR = VRRM
IR Tj = 100 °C, VR = VRRM
Cj
at 1 MHz and applied reverse voltage
of 4 V
ERSM
L = 60 mH, Tj = 25 °C, inductive load
switched off
Rthja
RthjL
4)
6)
500 µA
25 mA
- pF
- mJ
- K/W
1.8 K/W
Diode
© by SEMIKRON
Rev. 2 – 21.01.2011
1

1 page





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