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PDF IRFP460A Data sheet ( Hoja de datos )
| Número de pieza | IRFP460A | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Vishay Siliconix | |
| Logotipo |  |
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Power MOSFET
IRFP460A, SiHFP460A
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
500
VGS = 10 V
105
26
42
Single
0.27
D
TO-247
G
S
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Low Gate Charge Qg Results in Simple Drive
Requirement
Available
• Improved Gate, Avalanche and Dynamic dV/dt RoHS*
Ruggedness
COMPLIANT
• Fully Characterized Capacitance and
Avalanche Voltage and Current
• Effective Coss Specified
• Lead (Pb)-free Available
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptable Power Supply
• High Speed Power Switching
TYPICAL SMPS TOPOLOGIES
• Full Bridge
• PFC Boost
TO-247
IRP460APbF
SiHFP460A-E3
IRP460A
SiHFP460A
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
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Pulsed Drain Currenta
Linear Derating Factor
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
VGS at 10 V
TC = 25 °C
TC = 100 °C
TC = 25 °C
VDS
VGS
ID
IDM
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 4.3 mH, RG = 25 Ω, IAS = 20 A (see fig. 12).
c. ISD ≤ 20 A, dI/dt ≤ 125 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91234
S-81360-Rev. A, 28-Jul-08
LIMIT
500
± 30
20
13
80
2.2
960
20
28
280
3.8
- 55 to + 150
300d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
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1
1 page  
20
15
10
5
0
25
91234_09
50 75 100 125
TC, Case Temperature (°C)
150
Fig. 9 - Maximum Drain Current vs. Case Temperature
IRFP460A, SiHFP460A
Vishay Siliconix
VDS
VGS
RG
RD
D.U.T.
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
+- VDD
Fig. 10a - Switching Time Test Circuit
VDS
90 %
10 %
VGS
td(on) tr
td(off) tf
Fig. 10b - Switching Time Waveforms
1
0 − 0.5
0.1 0.2
0.1
0.05
0.02
10-2 0.01
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10-3
10-5
91234_11
Single Pulse
(Thermal Response)
10-4
10-3
10-2
t1, Rectangular Pulse Duration (S)
PDM
t1
t2
Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
0.1 1
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
15 V
VDS L
Driver
RG
20 V
tp
D.U.T.
IAS
0.01 Ω
+
- VDAD
Fig. 12a - Unclamped Inductive Test Circuit
Document Number: 91234
S-81360-Rev. A, 28-Jul-08
VDS
tp
IAS
Fig. 12b - Unclamped Inductive Waveforms
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5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRFP460A.PDF ] | |
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