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PDF IRFP450LC Data sheet ( Hoja de datos )
| Número de pieza | IRFP450LC | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Vishay Siliconix | |
| Logotipo |  |
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IRFP450LC, SiHFP450LC
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
500
VGS = 10 V
74
19
35
Single
0.40
TO-247
D
S
D
G
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Ultra Low Gate Charge
• Reduced Gate Drive Requirement
• Enhanced 30 V VGS Rating
• Reduced Ciss, Coss, Crss
• Isolated Central Mounting Hole
• Dynamic dV/dt Rated
• Repetitive Avalanche Rated
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
This new series of low charge Power MOSFETs achieve
significantly lower gate charge over conventional MOSFETs.
Utilizing advanced Power MOSFET technology the device
improvements allow for reduced gate drive requirements,
faster switching speeds and increased total system savings.
These device improvements combined with the proven
ruggedness and reliability of Power MOSFETs offer the
designer a new standard in power transistors for switching
applications.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use of
TO-220 devices. The TO-247 is similar but superior to the
earlier TO-218 package because of its isolated mounting
hole.
TO-247
IRFP450LCPbF
SiHFP450LC-E3
IRFP450LC
SiHFP450LC
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
Drain-Sourcewww.DataSheet4U.net Voltage
Gate-Source Voltage
SYMBOL
VDS
VGS
Continuous Drain Current
Pulsed Drain Currenta
VGS at 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
Linear Derating Factor
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
EAS
IAR
EAR
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
PD
dV/dt
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Recommendations (Peak Temperature)
for 10 s
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 7.0 mH, RG = 25 Ω, IAS = 14 A (see fig. 12).
c. ISD ≤ 14 A, dI/dt ≤ 130 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
LIMIT
500
± 30
14
8.6
56
1.5
760
14
19
190
3.5
- 55 to + 150
300d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
Document Number: 91231
S-81271-Rev. A, 16-Jun-08
www.vishay.com
1
1 page  
Fig. 9 - Maximum Drain Current vs. Case Temperature
IRFP450LC, SiHFP450LC
Vishay Siliconix
VDS
VGS
RG
RD
D.U.T.
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
+- VDD
Fig. 10a - Switching Time Test Circuit
VDS
90 %
10 %
VGS
td(on) tr
td(off) tf
Fig. 10b - Switching Time Waveforms
www.DataSheet4U.net
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
VDS
Vary tp to obtain
required IAS
RG
10 V
tp
L
D.U.T.
IAS
0.01 Ω
+
- V DD
Fig. 12a - Unclamped Inductive Test Circuit
VDS
VDS
tp
VDD
IAS
Fig. 12b - Unclamped Inductive Waveforms
Document Number: 91231
S-81271-Rev. A, 16-Jun-08
www.vishay.com
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRFP450LC.PDF ] | |
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