PDF IRFP448 Data sheet ( Hoja de datos )

Número de pieza	IRFP448
Descripción	Power MOSFET ( Transistor )
Fabricantes	Vishay Siliconix
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No Preview Available ! Power MOSFET IRFP448, SiHFP448 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) 500 VGS = 10 V 84 Qgs (nC) 8.4 Qgd (nC) 50 Configuration Single 0.60 D TO-247AC S D G G S N-Channel MOSFET FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT DESCRIPTION Third Generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications. ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-247AC IRFP448PbF SiHFP448-E3 IRFP448 SiHFP448 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc VGS at 10 V TC = 25 °C TC = 100 °C TC = 25 °C VDS VGS ID IDM EAS IAR EAR PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s TJ, Tstg Mounting Torque 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 8.2 mH, Rg = 25 Ω, IAS = 11 A (see fig. 12). c. ISD ≤ 11 A, dI/dt ≤ 120 A/μs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. LIMIT 500 ± 20 11 6.6 44 1.4 550 11 18 180 3.5 - 55 to + 150 300d 10 1.1 UNIT V A W/°C mJ A mJ W V/ns °C lbf · in N·m * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91229 S11-0444-Rev. B, 14-Mar-11 www.vishay.com 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1 page Fig. 9 - Maximum Drain Current vs. Case Temperature IRFP448, SiHFP448 Vishay Siliconix VDS VGS RG RD D.U.T. 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % +- VDD Fig. 10a - Switching Time Test Circuit VDS 90 % 10 % VGS td(on) tr td(off) tf Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91229 S11-0444-Rev. B, 14-Mar-11 www.vishay.com 5 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 5 Page

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