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PDF FNA41060 Data sheet ( Hoja de datos )

Número de pieza FNA41060
Descripción Smart Power Module
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! FNA41060 Hoja de datos, Descripción, Manual

FNA41060
Smart Power Module
January 2010
Motion-SPMTM
Features
• 600V-10A 3-phase IGBT inverter bridge including control ICs
for gate driving and protection
• Easy PCB layout due to built-in bootstrap diode and VS out-
put
• Divided negative dc-link terminals for inverter current sensing
applications
• Single-grounded power supply due to built-in HVIC
• Built-in thermistor for over-temperature monitoring
• Isolation rating of 2000Vrms/min.
Applications
• AC 100V ~ 253V three-phase inverter drive for small power
ac motor drives
• Home appliances applications like air conditioner and refrig-
erator
General Description
It is an advanced motion-smart power module (Motion-SPMTM)
that Fairchild has newly developed and designed to provide
very compact and high performance ac motor drives mainly tar-
geting low-power inverter-driven application like air conditioner
and refrigerator. It combines optimized circuit protection and
drive matched to low-loss IGBTs. System reliability is further
enhanced by the integrated under-voltage lock-out protection,
short-circuit protection, and temperature monitoring. The high
speed built-in HVIC provides opto-coupler-less single-supply
IGBT gate driving capability that further reduce the overall size
of the inverter system design. Each phase current of inverter
can be monitored separately due to the divided negative dc ter-
minals.
Additional Information
For further infomation, please see AN-9070 and FEB305-001 in
http://www.fairchildsemi.com
www.DataSheet4U.net
Figure 1.
©2010 Fairchild Semiconductor Corporation
FNA41060 Rev. C
1
www.fairchildsemi.com

1 page




FNA41060 pdf
Absolute Maximum Ratings (TJ = 25°C, Unless Otherwise Specified)
Inverter Part
Symbol
Parameter
Conditions
VPN
VPN(Surge)
VCES
± IC
± ICP
Supply Voltage
Supply Voltage (Surge)
Collector-emitter Voltage
Each IGBT Collector Current
Each IGBT Collector Current (Peak)
Applied between P- NU, NV, NW
Applied between P- NU, NV, NW
TC = 25°C, TJ 150°C
TC = 25°C, TJ 150°C, Under 1ms Pulse
Width
PC Collector Dissipation
TJ Operating Junction Temperature
TC = 25°C per One Chip
(Note 1)
Note:
1. The maximum junction temperature rating of the power chips integrated within the SPM is 150°C.
Rating
450
500
600
10
20
34
-40 ~ 150
Control Part
Symbol
Parameter
VCC Control Supply Voltage
VBS High-side Control Bias
Voltage
VIN Input Signal Voltage
VFO Fault Output Supply Voltage
IFO Fault Output Current
VSC Current Sensing Input Voltage
Conditions
Rating
Applied between VCC(H), VCC(L) - COM
20
Applied between VB(U) - VS(U), VB(V) - VS(V),
VB(W) - VS(W)
20
Applied between IN(UH), IN(VH), IN(WH), -0.3~VCC+0.3
IN(UL), IN(VL), IN(WL) - COM
Applied between VFO - COM
-0.3~VCC+0.3
Sink Current at VFO Pin
1
Applied between CSC - COM
-0.3~VCC+0.3
Units
V
V
V
A
A
W
°C
Units
V
V
V
V
mA
V
Bootstrap Diode Part
Symbol
Parameter
VRRM
IF
IFP
TJ
Maximum Repetitive Reverse Voltage
Forward Current
Forward Current (Peak)
Operating Junction Temperature
Conditions
TC = 25°C
TC = 25°C, Under 1ms Pulse Width
Rating
600
0.5
1
-40 ~ 150
Units
V
A
A
°C
Total System
Symbolwww.DataSheet4U.net
Parameter
VPN(PROT) Self Protection Supply Voltage Limit
(Short Circuit Protection Capability)
TSTG
VISO
Storage Temperature
Isolation Voltage
Conditions
VCC = VBS = 13.5 ~ 16.5V
TJ = 150°C, Non-repetitive, less than 2ms
60Hz, Sinusoidal, AC 1 minute, Connection
Pins to heat sink plate
Rating
400
-40 ~ 125
2000
Units
V
°C
Vrms
Thermal Resistance
Symbol
Parameter
Conditions
Rth(j-c)Q
Rth(j-c)F
Junction to Case Thermal
Resistance
Inverter IGBT part (per 1/6 module)
Inverter FWD part (per 1/6 module)
Note:
2. For the measurement point of case temperature(TC), please refer to Figure 2.
Min.
-
-
Typ.
-
-
Max.
3.6
4.8
Units
°C/W
°C/W
FNA41060 Rev. C
5 www.fairchildsemi.com

5 Page





FNA41060 arduino
Time Charts of SPMs Protective Function
Input Signal
Protection
Circuit State
Control
Supply Voltage
RESET
SET
UVCCR
a1
UVCCD
a2
a3
a4
RESET
a6
a7
Output Current
Fault Output Signal
a5
a1 : Control supply voltage rises: After the voltage rises UVCCR, the circuits start to operate when next input is applied.
a2 : Normal operation: IGBT ON and carrying current.
a3 : Under voltage detection (UVCCD).
a4 : IGBT OFF in spite of control input condition.
a5 : Fault output operation starts.
a6 : Under voltage reset (UVCCR).
a7 : Normal operation: IGBT ON and carrying current.
Figure 11. Under-Voltage Protection (Low-side)
Input Signal
www.DataSheet4U.net
Protection
Circuit State
Control
Supply Voltage
RESET
UVBSR
b1
UVBSD
b2
SET
b3
b4
RESET
b5
b6
Output Current
High-level (no fault output)
Fault Output Signal
b1 : Control supply voltage rises: After the voltage reaches UVBSR, the circuits start to operate when next input is applied.
b2 : Normal operation: IGBT ON and carrying current.
b3 : Under voltage detection (UVBSD).
b4 : IGBT OFF in spite of control input condition, but there is no fault output signal.
b5 : Under voltage reset (UVBSR)
b6 : Normal operation: IGBT ON and carrying current
Figure 12. Under-Voltage Protection (High-side)
FNA41060 Rev. C
11 www.fairchildsemi.com

11 Page







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