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PDF 18N50 Data sheet ( Hoja de datos )

Número de pieza 18N50
Descripción N-CHANNEL POWER MOSFET
Fabricantes Unisonic Technologies 
Logotipo Unisonic Technologies Logotipo



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No Preview Available ! 18N50 Hoja de datos, Descripción, Manual

UNISONIC TECHNOLOGIES CO., LTD
18N50
Preliminary
18 Amps, 500 Volts
N-CHANNEL POWER MOSFET
„ DESCRIPTION
The UTC 18N50 is an N-channel enhancement mode Power
MOSFET using UTC’s advanced planar stripe and DMOS technology
to provide perfect performance.
This technology can withstand high energy pulse in the avalanche
and commutation mode. It can provide minimum on-state resistance
and high switching speed.
This device is generally applied in active power factor correction
and high efficient switched mode power supplies.
„ FEATURES
* 18A, 500V, RDS(ON)=0.265@ VGS=10V
* High switching speed
* Typically 45nC low gate charge
* 100% avalanche tested
* Typically 25pF low CRSS
* Improved dv/dt capability
„ SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
„ ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
18N50L-TF1-T
18N50G -TF1-T
Note: Pin Assignment: G: Gate D: Drain
Package
TO-220F1
S: Source
Pin Assignment
1 23
G DS
Packing
Tube
www.DataSheet4U.com
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
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18N50 pdf
18N50
Preliminary
„ TEST CIRCUITS AND WAVEFORMS(Cont.)
Power MOSFET
Gate Charge Test Circuit
12V
200nF
50k
VGS
300nF
Same Type
as DUT
Gate Charge Waveforms
VGS
QG
10V
VDS
QGS
QGD
3mA
DUT
Charge
Unclamped Inductive Switching Test Circuit
VDS
RG ID
L
10V
tP
DUT
VDD
www.DataSheet4U.com
Unclamped Inductive Switching Waveforms
BVDSS
IAS
EAS=
1
2
LIAS2
BVDSS
BVDSS-VDD
ID(t)
VDD VDS(t)
tP Time
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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