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PDF 10N90 Data sheet ( Hoja de datos )

Número de pieza 10N90
Descripción N-CHANNEL POWER MOSFET
Fabricantes Unisonic Technologies 
Logotipo Unisonic Technologies Logotipo



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No Preview Available ! 10N90 Hoja de datos, Descripción, Manual

UNISONIC TECHNOLOGIES CO., LTD
10N90
Preliminary
10 Amps, 900 Volts
N-CHANNEL POWER MOSFET
1
„ DESCRIPTION
The UTC10N90 is a N-channel mode Power FET using UTC’s
advanced technology to provide costumers with planar stripe and
DMOS technology. This technology allows a minimum on-state
resistance and superior switching performance. It also can withstand
high energy pulse in the avalanche and commutation mode.
The UTC 10N90 is generally applied in high efficiency switch
mode power supply.
1
Power MOSFET
TO-220
TO-220F1
„ FEATURES
* Lower Leakage Current: 25µA (Max.) @ VDS = 900V
* Improved Gate Charge
„ SYMBOL
2.Drain
1.Gate
3.Source
„ ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
10N90L-TA3-T
10N90G-TA3-T
10N90L-TF1-T
10N90G-TF1-T
Note: Pin Assignment: G: Gate D: Drain
Package
TO-220
TO-220F1
S: Source
Pin Assignment
1 23
G DS
G DS
Packing
Tube
Tube
www.DataSheet4U.com
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., Ltd
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10N90 pdf
10N90
Preliminary
Peak Diode Recovery dv/dt Test Circuit & Waveforms
Power MOSFET
RG
VGS
DUT
ISD
+
VDS
L
-
Driver
Same Type
as DUT
VDD
dv/dt controlled by RG
ISD controlled by pulse period
(DVrGivSer
)
ISD
(DUT)
VDS
(DUT)
www.DataSheet4U.com
D=
Gate Pulse
Gate Pulse
Width
Period
10V
IFM, Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VF
VDD
Body Diode Forward
Voltage Drop
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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