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PDF 10N80 Data sheet ( Hoja de datos )
| Número de pieza | 10N80 | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | Unisonic Technologies | |
| Logotipo |  |
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UNISONIC TECHNOLOGIES CO., LTD
10N80
800V N-CHANNEL POWER
MOSFET
DESCRIPTION
The UTC 10N80 uses UTC’s advanced proprietary, planar
stripe, DMOS technology to provide excellent RDS(ON), low gate
charge and operation with low gate voltages. This device is
suitable for use as a load switch or in PWM applications.
FEATURES
* RDS(ON) = 1.1Ω @VGS = 10 V
* Ultra Low Gate Charge ( Typical 45 nC )
* Low Reverse Transfer Capacitance ( CRSS = Typical 15 pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
10N80L-T3P-T
10N80G-T3P-T
10N80L-TF1-T
10N80G-TF1-T
Package
TO-3P
TO-220F1
Pin Assignment
123
GDS
GDS
Packing
Tube
Tube
www.DataSheet4U.com
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-218.D
1 page  
10N80
TEST CIRCUIT(Cont.)
D.U.T.
+
-
+
VDS
-
L
Power MOSFET
RG
VGS
Same Type
as D.U.T.
Driver
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
VDD
VGS
(Driver)
ISD
(D.U.T.)
VDS
(D.U.T.)
www.DataSheet4U.com
Peak Diode Recovery dv/dt Test Circuit
P.W.
Period
P. W.
D= Period
VGS= 10V
IFM, Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDD
Body Diode
Forward Voltage Drop
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 6
QW-R502-218.D
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 10N80.PDF ] | |
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