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PDF 10N75 Data sheet ( Hoja de datos )
| Número de pieza | 10N75 | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | Unisonic Technologies | |
| Logotipo |  |
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UNISONIC TECHNOLOGIES CO., LTD
10N75
Preliminary
10 Amps, 750 Volts
N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 10N75 is a N-channel mode Power FET using UTC’s
advanced technology to provide costomers with planar stripe and
DMOS technology. This technology specialized in allowing a minimum
on-state resistance and superior switching performance. It also can
withstand high energy pulse in the avalanche and commutation mode.
The UTC 10N75 is universally applied in high efficiency switch
mode power supply, active power faction correction, electronic lamp
based on half bridge topology.
Power MOSFET
1
TO-220
1
TO-220F
1
TO-220F1
FEATURES
* 10A, 750V, RDS(on)=1.1Ω @VGS=10V
* High switching speed
* Improved dv/dt capability
* 100% avalanche tested
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
10N75L-TA3-T
10N75G-TA3-T
10N75L-TF3-T
10N75G-TF3-T
10N75L-TF1-T
10N75G-TF1-T
Note: Pin Assignment: G: Gate D: Drain
Package
TO-220
TO-220F
TO-220F1
S: Source
Pin Assignment
123
GDS
GDS
GDS
Packing
Tube
Tube
Tube
www.DataSheet4U.com
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-501.a
1 page  
10N75
Preliminary
Power MOSFET
3mA
Gate Charge Test Circuit
12V
200nF
50kΩ
VGS
300nF
Same Type
as DUT
DUT
Gate Charge Waveforms
VGS
QG
10V
VDS
QGS
QGD
Charge
Unclamped Inductive Switching Test Circuit
VDS
RG ID
L
10V
tP
DUT
VDD
www.DataSheet4U.com
Unclamped Inductive Switching Waveforms
BVDSS
IAS
EAS=
1
2
LIAS2
BVDSS
BVDSS-VDD
ID(t)
VDD VDS(t)
tP Time
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., Ltd
5 of 6
QW-R502-501.a
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 10N75.PDF ] | |
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