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PDF DE275-501N16A Data sheet ( Hoja de datos )
| Número de pieza | DE275-501N16A | |
| Descripción | RF Power MOSFET | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
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Directed Energy, Inc.
An IXYS Company
N-Channel Enhancement Mode
Avalanche Rated
Low Qg and Rg
High dv/dt
Nanosecond Switching
DE275-501N16A
RF Power MOSFET
Preliminary Data Sheet
VDSS
ID25
RDS(on)
=
=
=
500 V
16 A
.5 Ω
Symbol Test Conditions
Maximum Ratings
PDHS = 375 W
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
dv/dt
PDHS
PDAMB
RthJHS
TJ
TJM
Tstg
TL
Weight
Symbol
TJ = 25°C to 150°C
500 V
TJ = 25°C to 150°C; RGS = 1 MΩ
500 V
Continuous
±20 V
Transient
±30 V
Tc = 25°C
16 A
Tc = 25°C, pulse width limited by TJM
98 A
Tc = 25°C
Tc = 25°C
16 A
20 mJ GATE
DRAIN
IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS,
Tj ≤ 150°C, RG = 0.2Ω
IS = 0
Tc = 25°C
Derate 3.0W/°C above 25°C
Tc = 25°C
1.6mm (0.063 in) from case for 10 s
5 V/ns
>200 V/ns
375 W
3.0
0.33
-55…+150
150
-55…+150
300
2
W
K/W
°C
°C
°C
°C
g
Test Conditions
Characteristic Values
TJ = 25°C unless otherwise specified
SG1 SG2
SD1 SD2
Features
• Isolated Substrate
− high isolation voltage (>2500V)
− excellent thermal transfer
− Increased temperature and power
cycling capability
• IXYS advanced low Qg process
• Low gate charge and capacitances
− easier to drive
− faster switching
• Low RDS(on)
• Very low insertion inductance (<2nH)
• No beryllium oxide (BeO) or other
hazardous materials
VDSS
VGS = 0 V, ID = 3 ma
VGS(th)
VDS = VGS, ID = 4 ma
IGSS
VGS = ±20 VDC, VDS = 0
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IDSS
VDS = 0.8 VDSS TJ = 25°C
VGS = 0
TJ = 125°C
min.
500
2.5
typ.
max.
V
5.5 V
±100 nA
50 µA
1 mA
Advantages
• Optimized for RF and high speed
switching at frequencies to 100MHz
• Easy to mount—no insulators needed
• High power density
RDS(on)
VGS = 15 V, ID = 0.5ID25
Pulse test, t ≤ 300µS, duty cycle d ≤ 2%
.5 Ω
gfs VDS = 15 V, ID = 0.5ID25, pulse test 2 6
S
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| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet DE275-501N16A.PDF ] | |
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