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Datasheet K8A56ETC Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | K8A56ETC | 256Mb C-die NOR FLASH Rev. 1.0, Nov. 2010 K8A56(57)ET(B)(Z)C
256Mb C-die NOR FLASH
16M x16, Synch Burst Multi Bank SLC NOR Flash
datasheet
SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes onl |  Samsung semiconductor | data |
K8A Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | K8A1215EBC | 512Mb C-die NOR FLASH Rev. 1.1, Sep. 2010 K8A12(13)15ET(B/Z)C
512Mb C-die NOR FLASH
(32Mb x16) Synch Burst, Multi Bank SLC (1.7V ~ 1.95V)
datasheet
SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference pur Samsung semiconductor data | | |
| 2 | K8A1215ETC | 512Mb C-die NOR FLASH Rev. 1.1, Sep. 2010 K8A12(13)15ET(B/Z)C
512Mb C-die NOR FLASH
(32Mb x16) Synch Burst, Multi Bank SLC (1.7V ~ 1.95V)
datasheet
SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference pur Samsung semiconductor data | | |
| 3 | K8A1215EZC | 512Mb C-die NOR FLASH Rev. 1.1, Sep. 2010 K8A12(13)15ET(B/Z)C
512Mb C-die NOR FLASH
(32Mb x16) Synch Burst, Multi Bank SLC (1.7V ~ 1.95V)
datasheet
SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference pur Samsung semiconductor data | | |
| 4 | K8A1315EBC | 512Mb C-die NOR FLASH Rev. 1.1, Sep. 2010 K8A12(13)15ET(B/Z)C
512Mb C-die NOR FLASH
(32Mb x16) Synch Burst, Multi Bank SLC (1.7V ~ 1.95V)
datasheet
SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference pur Samsung semiconductor data | | |
| 5 | K8A1315ETC | 512Mb C-die NOR FLASH Rev. 1.1, Sep. 2010 K8A12(13)15ET(B/Z)C
512Mb C-die NOR FLASH
(32Mb x16) Synch Burst, Multi Bank SLC (1.7V ~ 1.95V)
datasheet
SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference pur Samsung semiconductor data | | |
| 6 | K8A1315EZC | 512Mb C-die NOR FLASH Rev. 1.1, Sep. 2010 K8A12(13)15ET(B/Z)C
512Mb C-die NOR FLASH
(32Mb x16) Synch Burst, Multi Bank SLC (1.7V ~ 1.95V)
datasheet
SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference pur Samsung semiconductor data | | |
| 7 | K8A50D | TK8A50D TK8A50D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK8A50D
Switching Regulator Applications
• • • • Low drain-source ON-resistance: RDS (ON) = 0.7 Ω (typ.) High forward transfer admittance: |Yfs| = 4.0 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 500  Toshiba data | |
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| Número de pieza | Descripción | Fabricantes | |
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