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PDF IRG7S319UPBF Data sheet ( Hoja de datos )
| Número de pieza | IRG7S319UPBF | |
| Descripción | PDP TRENCH IGBT | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 97155
IRG7S319UPbF
PDP TRENCH IGBT
Features
l Advanced Trench IGBT Technology
l Optimized for Sustain and Energy Recovery
circuits in PDP applications
l Low VCE(on) and Energy per Pulse (EPULSETM)
for improved panel efficiency
l High repetitive peak current capability
l Lead Free package
Key Parameters
VCE min
VCE(ON) typ. @ IC = 20A
IRP max @ TC= 25°C
TJ max
330
1.26
170
150
C
V
V
A
°C
G
E
n-channel
CE
G
D2Pak
IRG7S319UPbF
G
Gate
C
Collector
E
Emitter
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced
trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel
efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.
Absolute Maximum Ratings
Parameter
VGE
IC @ TC = 25°C
IC @ TC = 100°C
IRP @ TC = 25°C
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Emitter Voltage
Continuous Collector Current, VGE @ 15V
Continuous Collector, VGE @ 15V
cRepetitive Peak Current
Power Dissipation
Power Dissipation
Linear Derating Factor
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature for 10 seconds
www.DTahtaeSrhmeeat4lUR.ceomsistance
Parameter
dRθJC Junction-to-Case
Max.
±30
45
20
170
96
38
0.77
-40 to + 150
300
Typ.
–––
Max.
1.3
Units
V
A
W
W/°C
°C
Units
°C/W
www.irf.com
1
10/2/09
1 page  
10000
1000
Cies
IRG7S319UPbF
20 ID= 25A
16 VDS= 240V
VDS= 200V
12 VDS= 60V
100
10
0
Coes
Cres
100
VCE (V)
8
4
0
0 10 20 30 40
200
QG Total Gate Charge (nC)
Fig 13. Typical Capacitance vs. Collector-to-Emitter Voltage Fig 14. Typical Gate Charge vs. Gate-to-Emitter Voltage
10
1
D = 0.50
0.20
0.1 0.10
0.05
0.02
0.01
0.01
0.001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
τJ τJ
τ1 τ1
R1R1
CiC= iτ=i/τRi/iRi
R2R2
τ2 τ2
R3R3 Ri (°C/W) τι (sec)
τCτ 0.459659 0.000349
τ3τ3 0.55727 0.001537
0.283959 0.00944
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
0.01
0.1
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRG7S319UPBF.PDF ] | |
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