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PDF IRG7PH46UDPbF Data sheet ( Hoja de datos )

Número de pieza IRG7PH46UDPbF
Descripción INSULATED GATE BIPOLAR TRANSISTOR
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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No Preview Available ! IRG7PH46UDPbF Hoja de datos, Descripción, Manual

PD - 97498
IRG7PH46UDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
IRG7PH46UD-EP
ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE (ON) trench IGBT technology
• Low switching losses
C VCES = 1200V
• Square RBSOA
• 100% of the parts tested for ILM 
• Positive VCE (ON) temperature co-efficient
• Ultra fast soft recovery co-pak diode
G
I NOMINAL = 40A
TJ(max) = 150°C
• Tight parameter distribution
• Lead-Free
Benefits
E
n-channel
VCE(on) typ. = 1.7V
• High efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
low VCE (ON) and low switching losses
• Rugged transient performance for increased reliability
C
C
• Excellent current sharing in parallel operation
Applications
• U.P.S.
• Welding
• Solar Inverter
• Induction Heating
GC E
TO-247AC
IRG7PH46UDPbF
GC E
TO-247AD
IRG7PH46UD-EP
G
Gate
C
Collector
E
Emitter
Absolute Maximum Ratings
Parameter
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C
Continuous Collector Current (Silicon Limited)
IC @ TC = 100°C
Continuous Collector Current (Silicon Limited)
INOMINAL
Nominal Current
ICM Pulse Collector Current, VGE = 15V
cILM Clamped Inductive Load Current, VGE = 20V
IF @ TC = 25°C
Diode Continous Forward Current
IF @ TC = 100°C
IFM
Diode Continous Forward Current
dDiode Maximum Forward Current
VGE Continuous Gate-to-Emitter Voltage
PD @ TC = 25°C
Maximum Power Dissipation
PD @ TC = 100°C
Maximum Power Dissipation
TJ Operating Junction and
TSTG
Storage Temperature Range
www.DataSheet4U.comSoldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
RθJC (IGBT)
RθJC (Diode)
RθCS
RθJA
Parameter
fThermal Resistance Junction-to-Case-(each IGBT)
fThermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
1
Max.
1200
108
57
40
120
160
108
57
160
±30
390
156
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Units
V
A
V
W
°C
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
40
Max.
0.32
0.66
–––
–––
Units
°C/W
www.irf.com
04/26/2010

1 page




IRG7PH46UDPbF pdf
IRG7PH46UDPbF/IRG7PH46UD-EP
12 120
10 100
8
ICE = 20A
6 ICE = 40A
ICE = 80A
4
2
0
4
9000
8 12 16
VGE (V)
Fig. 11 - Typical VCE vs. VGE
TJ = 150°C
8000
7000
20
6000
5000
EON
4000
3000
2000
EOFF
1000
0
0 10 20 30 40 50 60 70 80
IC (A)
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 150°C; L = 200µH; VCE = 600V, RG = 10; VGE = 15V
10000
9000
8000
EOFF
7000
6000
5000
www.DataSheet4U.com
4000
EON
3000
2000
0
20 40 60 80 100
RG ()
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 150°C; L = 200µH; VCE = 600V, ICE = 40A; VGE = 15V
80
60 TJ = 25°C
TJ = 150°C
40
20
0
456789
VGE, Gate-to-Emitter Voltage (V)
Fig. 12 - Typ. Transfer Characteristics
VCE = 50V
1000
tdOFF
tF
100
tdON
tR
10
0 10 20 30 40 50 60 70 80
IC (A)
Fig. 14 - Typ. Switching Time vs. IC
TJ = 150°C; L = 200µH; VCE = 600V, RG = 10; VGE = 15V
10000
1000
100
tdOFF
tF
tdON
tR
10
0
20 40 60 80 100
RG ()
Fig. 16 - Typ. Switching Time vs. RG
TJ = 150°C; L = 200µH; VCE = 600V, ICE = 40A; VGE = 15V
www.irf.com
5

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IRG7PH46UDPbF arduino
IRG7PH46UDPbF/IRG7PH46UD-EP
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
TO-247AD Part Marking Information
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TO-247AD package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.DataSheet4U.com
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.
www.irf.com
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 04/2010
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