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PDF IRG7PH46UPbF Data sheet ( Hoja de datos )
| Número de pieza | IRG7PH46UPbF | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | International Rectifier | |
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INSULATED GATE BIPOLAR TRANSISTOR
Features
• Low VCE (ON) trench IGBT technology
• Low switching losses
• Maximum junction temperature 175 °C
• Square RBSOA
• 100% of the parts tested for ILM
• Positive VCE (ON) temperature co-efficient
• Tight parameter distribution
• Lead -Free
Benefits
• High efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
low VCE (ON) and low switching losses
• Rugged transient performance for increased reliability
• Excellent current sharing in parallel operation
Applications
• U.P.S
• Welding
• Solar inverter
• Induction heating
C
G
E
n-channel
PD - 96305
IRG7PH46UPbF
IRG7PH46U-EP
VCES = 1200V
IC = 75A, TC = 100°C
TJ(max) =175°C
VCE(on) typ. = 1.7V
CC
GC E
TO-247AC
IRG7PH46UPbF
GC E
TO-247AD
IRG7PH46U-EP
G
Gate
C
Collector
E
Emitter
Absolute Maximum Ratings
Parameter
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C
Continuous Collector Current (Silicon Limited)
IC @ TC = 100°C
Continuous Collector Current (Silicon Limited)
INOMINAL
Nominal Current
ICM Pulse Collector Current, VGE = 15V
cILM Clamped Inductive Load Current, VGE = 20V
VGE Continuous Gate-to-Emitter Voltage
PD @ TC = 25°C
Maximum Power Dissipation
PD @ TC = 100°C
Maximum Power Dissipation
TJ Operating Junction and
TSTG
Storage Temperature Range
www.DataSheet4U.comSoldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
RθJC (IGBT)
RθCS
RθJA
Parameter
fThermal Resistance Junction-to-Case-(each IGBT) TO-247AC
fThermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
1
Max.
1200
g130
75
40
120
160
±30
469
234
-55 to +175
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Min.
–––
–––
–––
Typ.
–––
0.24
40
Max.
0.32
–––
–––
Units
V
A
V
W
°C
Units
°C/W
www.irf.com
04/20/10
1 page  
IRG7PH46UPbF/IRG7PH46U-EP
160
140
120 TJ = 25°C
TJ = 175°C
100
80
60
40
20
0
3456789
VGE, Gate-to-Emitter Voltage (V)
Fig. 12- Typ. Transfer Characteristics
VCE = 50V; tp = 20µs
1000
tdOFF
9200
8200
7200
6200
5200
4200
3200
2200
1200
EON
EOFF
200
0 10 20 30 40 50 60 70 80
IC (A)
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 200µH; VCE = 600V, RG = 10Ω; VGE = 15V
10000
tF
100
tdON
8000
6000
4000
EOFF
EON
tR
10
0 10 20 30 40 50 60 70 80
Fig. 14 - Typ. SwitchiInCg(TA)ime vs. IC
TJ = 175°C; L = 200µH; VCE = 600V, RG = 10Ω; VGE = 15V
10000
2000
0
25 50 75 100
Rg (Ω)
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 200µH; VCE = 600V, ICE = 40A; VGE = 15V
www.DataSheet4U.com
www.irf.com
1000
tdOFF
tF
100 tR
tdON
10
0
20 40 60 80 100
RG (Ω)
Fig. 16 - Typ. Switching Time vs. RG
TJ = 175°C; L = 200µH; VCE = 600V, ICE = 40A; VGE = 15V
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRG7PH46UPbF.PDF ] | |
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